Old Deposition Data - 2021-12-15

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OLD Data: Copied on 2021-12-14


Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

Historical Particulate Data

SiN deposition (PECVD #1)

Historical Data

Thin-Film Properties
Uniformity Data

SiO2 deposition (PECVD #1)

Historical Data

Thin-Film Properties
Thick-Film Properties

Uniformity Data

Low-Stress SiN - LS-SiN (PECVD#1)

SiOxNy deposition (PECVD #1)

Cleaning Recipes (PECVD #1)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
  2. Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.

Standard Cleaning Recipe: "CF4/O2 Clean"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

PECVD 2 (Advanced Vacuum)

Historical Particulate Data

SiO2 deposition (PECVD #2)

Standard Recipe


Historical Data

Thin-Film Properties
Thin-Film Properties
Uniformity Data

SiN deposition (PECVD #2)

Standard Recipe

Historical Data

Thin-Film Properties
Uniformity Data

Low-Stress SiN deposition (PECVD #2)

Low-Stress SilIcon Nitride (< 100 MPa)

Standard Recipe

Historical Data

Thin-Film Properties
Uniformity Data

Amorphous-Si deposition (PECVD #2)

Cleaning Recipes (PECVD #2)

Cleaning Procedure (PECVD#2)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
  2. Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

Standard Clean Recipe: "STD CF4/O2 Clean recipe"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

Clean Times (PECVD#2)

Film Deposited Cleaning Time (Dry)
SiO2 1 min. clean for every 1 min. deposition
Si3N4 1 min. clean for every 7 min of deposition
If > 29min total dep time

(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes


ICP-PECVD (Unaxis VLR)

2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.

The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.

Historical Particulate Data

Standard Recipes

SiO2 LDR 250C Deposition (Unaxis VLR)

Low-Deposition Rate SiO2

Historical Data

Thin-Film Properties

This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure here.

Uniformity Data

SiO2 HDR 250C Deposition (Unaxis VLR)

High-Deposition Rate SiO2

Historical Data

Thin-Film Properties

This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure here.

Uniformity Data

SiN 250C deposition (Unaxis VLR)

Historical Data

Thin-Film Properties

This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure here.

Uniformity Data

SiN LS 250C Deposition (Unaxis VLR)

Low Stress Silicon-Nitride

Historical Data

To Be Added

Thin-Film Properties

This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure here.

Uniformity Data

Cleaning Recipes (Unaxis VLR Dep)

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

  • SiNx etches at 20nm/min
  • SiO2 etches at 40nm/min



SiO2 deposition (IBD)

SiO2 Historical Data

SiO2 1hr deposition properties:

  • Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~350 nm/min
  • Stress ≈ -390MPa (compressive)
  • Refractive Index: ≈ 1.494
  • [Cauchy Parameters] (350-2000nm):
    • A = 1.480
    • B = 0.00498
    • C = -3.2606e-5

Si3N4 deposition (IBD)

  • Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~11nm/min
  • Stress ≈ -1590MPa (compressive)
  • Refractive Index: ≈ 1.969
  • [Cauchy Parameters] (350-2000nm):
    • A = 2.000
    • B = 0.01974
    • C = 1.2478e-4

SiOxNy deposition (IBD)

These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact Demis for more info.

plot showing varying refractive index between Si3N4 and SiO2
IBD SiOxNy: Refractive Index vs. O2/N2 Flow.
Rate varies monotonically from 53-5 Å/min.
Dep. Rate of IBD SiOxNy vs. Assist O2 flow.

Ta2O5 deposition (IBD)

Ta2O5 Historical Data (IBD)

Ta2O5 Deposition/Film Properies (IBD)

  • Ta2O5 1hr depositions:
  • Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~2 nm/min
  • Stress ≈ -232MPa (compressive)
  • Refractive Index: ≈ 2.172
  • [Cauchy Parameters] (350-2000nm):
    • A = 2.1123
    • B = 0.018901
    • C = -0.016222

TiO2 deposition (IBD)

  • Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
  • HF etch rate ~5.34nm/min
  • Stress ≈ -445MPa (compressive)
  • Refractive Index: ≈ 2.259
  • [Cauchy Parameters] (350-2000nm):
    • A = 2.435
    • B = -4.9045e-4
    • C = 0.01309
  • Absorbing < ~350nm

Al2O3 deposition (IBD)

  • Al2O3 standard recipe: 1_Al2O3_dep
  • Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps)
  • HF etch rate ~167nm/min
  • Stress ≈ -332MPa (compressive)
  • Refractive Index: ≈ 1.656
  • [Cauchy Parameters] (350-2000nm):( working on)
    • A =
    • B =
    • C =
  • Absorbing < ~350nm
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