Oxford ICP Etcher - Process Control Data
Jump to navigation
Jump to search
Data - InP Ridge Etch (Oxford ICP Etcher)
 Work In Progress This article is still under construction. It may contain factual errors. Content is subject to change. |
| InP Ridge Etch: 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec) | |||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
| 1/11/22 | DJ_Cal | 0.602 | 64.6nm left | Software timing bugs fixed - new etch rate will appear slightly higher. | [1] |
| 1/12/22 | DJ_Cal02 | 0.563 | 76.4nm left | [2] (wrong) | |
| 1/12/22 | DJ_Cal03 | 0.612 | 80.1nm left | [3] (wrong) | |