Unaxis VLR Etch - Process Control Data

Data - InP Ridge Etch (Unaxis VLR)

PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1

InP Ridge Etch: 200°C, 1.4mT, 800W/125W, Cl2=6.3, H2=12.7, Ar=2.0 sccm, time=1min30sec (90sec) Sample Size: 1x1cm epi-grade InP, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive. Conditioning: Prior to the etch, do O2 clean 15 minutes, then, chamber coating with the same recipe on 1/4-2" InP on Silicon carrier for 15 minutes.
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (InP/SiO2)	Comments	SEM Images
11/18/22	ND_Unaxis_03	800	45.3	Only slightly less PR etched led to extremely high selectivity.	[30D][CS]
11/11/22	ND_Unaxis_02	760	24.5		[30D] [CS]
9/30/22	ND_Unaxis_01	760	22.1	etch rate is correct, previous rates are taken in microns/min	[30D][CS]
4/28/22	NP_Unaxis_03	1.51	22.2	Normal profile - vertical and smooth.	[1] [2]
3/30/22	NP_Unaxis_02	1.41	14.6	Strong undercut!	[1] [2]
3/9/22	NP_Unaxis_01	1.30	15.3		[1] [2]
11/8/2021	InP#2102	1.24	13.8		[1][2]
2/3/2021	InP#2101	1.30	16		[3][4]
8/30/2020	InP#2001	1.11	10.4		[5]
1/31/2019	InP#1901	0.88	9.7		[6][7]
12/10/2018	InP#1809	1.01	11.4		[8]
10/3/2018	InP#1808	1.01	13.7		[9]
8/7/2018	InP#1807	0.81	8.0		[10]
5/22/2018	InP#1806	0.88	8.4		[11]
4/26/2018	InP#1805	1.29	13.6		[12]
4/10/2018	InP#1804	1.12	12.8		[13]
4/5/2018	InP#1803	1.05	11.9		[14]
3/1/2018	InP#1802	0.96	9		[15]
1/2/2018	InP#1801	1.44	14.3		[16]
12/7/2017	InP#1714	0.96	10.4		[17]
11/21/2017	InP#1713	1.04	12.1		[18]
10/23/2017	InP#1712	1.11	13.1		[19]
10/11/2017	InP#1711	1	11		[20]
8/28/2017	InP#1710	1	11.7		[21]
8/16/2017	InP#1709	0.76	8		[22]
7/6/2017	InP#1708	0.98	12.1		[23]
5/19/2017	InP#1707	0.82	9.9		[24]
5/4/2017	InP#1706	0.84	11		[25]
4/20/2017	inP#1705	0.88	10.2		[26]
3/21/2017	InP#1704	1.01	11.3		[27]
2/21/2017	InP#1703	0.91	11.3		[28]
2/7/2017	InP#1702	0.75	7.7		[29]
1/23/2017	InP#1701	0.93	9.4		[30]
12/15/2016	InP#1615	0.91	9.3		[31]
12/1/2016	InP#1614	0.96	12.1		[32]
10/4/2016	InP#1613	0.92	8.9		[33]