ICP-Etch (Unaxis VLR)

ICP-Etch (Unaxis VLR) Location Bay 1 Tool Type Dry Etch Manufacturer Unaxis Description ? Primary Supervisor Tony Bosch (805) 893-3486 bosch@ece.ucsb.edu Secondary Supervisor Don Freeborn Recipes Dry Etch Recipes SignupMonkey: Sign up for this tool

This tool has been decommissioned. Please use the Oxford Cobra ICP Etcher for III-V etching instead. -- 2023 Demis D. John.

About

This system is configured as an ICP etching tool with 1000 W ICP power, 600 W RF substrate power, and 30C - 200°C operation with back-side He to maintain controlled surface temperatures during etching. This chamber has Cl₂, BCl₃, Ar, N₂, and O₂ for gas sources and can be used to etch a variety of materials from compound semiconductors to metals. The high temperature etching is specifically useful for etching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue. High aspect ratio, smooth vertical wall, InP and related compound semiconductor (InGaAs, InAlAs, InGaAsP, etc.) etching is done in this system. The chamber is configured for 4" wafers. Pieces are handled by using a silicone-based thermal heat sink compound. Both sapphire and silicon carrier wafers are available. Laser end-point monitoring is also included in the system.

Cluster Configuration

A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.

• PM3: ICP-PECVD Deposition
• PM1: ICP Etch (this page)

Detailed Specifications

• 1000 W ICP source, 600 W RF Bias Source
• 30 - 200°C sample temperature for etching
• Laser monitoring available
• Cl₂, BCl₃, Ar, N₂, H₂, SF₆,and O₂ in etch chamber
• Multiple 4” diameter wafer capable system
• Pieces possible by mounting to 4 ” wafer with thermal compound

Documentation

• Operating Instructions

Recipes

Process Control Data (Unaxis VLR)

• InP Etch - Process Control Data

GaAs-AlGaAs Etch (Unaxis VLR)

• GaAs Etch Recipe (Cl₂N₂ 30C)
• AlGaAs Etch Recipe (Cl₂N₂ 30C)

InP-InGaAs-InAlAs Etch (Unaxis VLR)

• InP-based Material Etch Profile (Cl₂N₂Ar200C)
• InP-InGaAs Etch Profile (Cl₂H₂Ar 200C)
• Recipe of Etching SiO₂ Mask for Cl₂ Etch (ICP#2)
• InP Etch Historical Data (Cl₂H₂Ar 200C)
• InP Etch Test
• Lower etch-rate InP Etch (Cl₂N₂ 200C)

GaN Etch (Unaxis VLR)

• GaN Etch Recipe (Cl₂BCl₃N₂Ar 85C)

GaSb Etch (Unaxis VLR)

Available - ask staff

Cleaning Recipes (Unaxis VLR)

To Be Added: Required cleaning time & recipes