Process Group - Process Control Data

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Process Control Data are standardized processes, run by the NanoFab, allowing for day-to-day or year-by-year comparisons of a tool's performance at the process level. This is similar Statistical Process Control (SPC).

These are the same links are found on individual tool pages, in the <<tool page>> > Process Control section.

Data are collected by our Process Group Interns and reviewed by Process Group Staff.

Deposition, Dielectric (Process Control Data)

SPC chart example
Example Process Control Charts (SPC) for thin-film DepCals.
screenshot of surfscan particle count
Example particle counts taken on each tool+film.
Screenshot of Filmetrics F50 wafermap of typical DepCals film
Example of DepCals Thickness/Refractive Index uniformity measurement (4% shown here).

Process Control data for various deposition tools in the lab.

PECVD #1 (PlasmaTherm 790) - Process Control

PECVD #2 (Advanced Vacuum) - Process Control

ICP-PECVD (Unaxis VLR Dep) - Process Control

Ion Beam Sputter Deposition (Veeco Nexus) - Process Control

Old Data (Pre 2022)

Old data in a different format can be found below:


Deposition, Metal - Process Control Data

Process Control data for various deposition tools in the lab.

Sputter 5 (AJA ATC 2200-V) - Process Control

Sputter 5: Ti

Sputter 5: Al

Sputter 5: Cr

E-Beam 4 (CHA) - Process Control

E-Beam 4: Ti

E-Beam 4: Au

E-Beam 4: Cr

E-Beam 4: Ni

E-Beam 1 (Sharon) - Process Control

E-Beam 1: Ti

E-Beam 1: Au

E-Beam 1: Cr

E-Beam 1: Ni

Etching (Process Control Data)

Process Control data for various dry etching tools in the lab.

PlasmaTherm SLR Fluorine Etcher - Process Control

SiO2 Etching (FL-ICP Process Control)

We have found that SiO2 etching is fairly insensitive to chamber condition.

Old SiO2 Process Control Data

Si Etching (FL-ICP Process Control)

This Si etch is much more sensitive to chamber condition, allowing us to detect chamber contamination faster.

  • Recipe: SiVertHFv2 - C4F8/SF6/CF4 etch of 100mm Silicon Wafer with ~50% open area and resist mask

Panasonic ICP #1 - Process Control

Old Process Control Data

Panasonic ICP#2 - Process Control

GaAs Etch with N2/Cl2 - Process Control Data (Panasonic 2)

SiO2 Etch with CHF3/CF4 - Process Control Data (Panasonic 2)

Old Process Control Data

Unaxis VLR Etch - Process Control

Oxford PlasmaPro Cobra Etcher - Process Control

Std InP Ridge Etch Cl2/H2/Ar/200°C

Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/H2/Ar @ 200°C, 1cm piece with ~50% SiO2 hardmask.

example SPC chart for Oxford ICP Etcher
Click for Process Control Charts

Std InP Ridge Etch: Cl2/CH4/H2/60°C

Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/CH4/H2 @ 60°C, 1cm piece with ~50% SiO2 hardmask. No longer calibrating this recipe.

Old InP Ridge Etch Data

GaN Etch (Cl2/BCl3/Ar/200°C)

Recipe: Std GaN Etch - BCl3/Cl2/Ar - 200C (Public), on 1cm x 1cm ~1.2µm deep GaN etch with Cl2/BCl3/Ar at 200°C. Sapphire substrate with SiO2 mask for GaN.

PlasmaTherm DSEIII Deep Silicon Etcher - Process Control

Si Bosch Etching C4F8/SF6/Ar

  • Recipe: STD_Bosch_Si (⭐️Production), on 100mm Si Wafer with ~50% open area, photoresist mask, ~40µm deep

Lithography (Process Control Data)

Process Control Data for Nanofab Lithography/patterning tools.

Stepper #3 (ASML DUV) - Process Control

ASML CD Calibration data - Screenshot of Table
Example of Data Table with SEM's of 320nm features. Click for full data table.
ASML CD Calibration Data - Screenshot of SPC Plot
Example SPC Chart - Measured Critical Dimension "CD" versus Date. Click for charts.
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