Difference between revisions of "DS-K101-304 Bake Temp. versus Develop Rate"
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(added data from email form Sean Demura) |
(No difference)
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Revision as of 07:37, 17 September 2019
Conditions
All wafers were spun at 1.5krpm and baked for 60s at various temperatures (200C, 210C, 220C).
Checked thickness on the ellipsometer, developed in 300MIF for 30s and check thickness again.
| Bake Temp | Bake Time | Develop Rate |
|---|---|---|
| 200°C | 60 sec | ~20 nm/min |
| 210°C | 60 sec | ~3 nm/min |
| 220°C | 60 sec | ~0.1 nm/min |
Courtesy Sean Demura, III-V Innovative Solutions, 2019