DS-K101-304 Bake Temp. versus Develop Rate

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All wafers were spun at 1.5krpm and baked for 60s at various temperatures (200C, 210C, 220C). 

Checked thickness on the ellipsometer, developed in 300MIF for 30s and check thickness again.

Note that with patterned top-layer resists, rates may differ - these are guidelines only.

Develop rates in AZ 300MiF
Bake Temp Bake Time Develop Rate
185°C 60 sec ~75 nm/min
200°C 60 sec ~20 nm/min
210°C 60 sec ~3 nm/min
220°C 60 sec ~0.1 nm/min

Courtesy Brian Burkett, 2019