Difference between revisions of "ICP-PECVD (Unaxis VLR)"

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*[[media:Unaxis_PM3_Web_Operational_Procedure_3-21-14.pdf|Operating Instructions]]
*[[media:Unaxis_PM3_Web_Operational_Procedure_3-25-14.pdf|Operating Instructions]]

Revision as of 16:44, 25 March 2014

Tool Type Vacuum Deposition
Location Bay 1
Supervisor Tony Bosch
Supervisor Phone (805) 893-3486
Supervisor E-Mail bosch@ece.ucsb.edu
Description High Density ICP PECVD
Manufacturer Unaxis
Vacuum Deposition Recipes
Sign up for this tool


This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 50°C-350°C operation. This chamber has 100% SiH4, N2, O2, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO2 and Si3N4, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 50°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.

Detailed Specifications

  • 1000W ICP source, 600W RF Sample Bias Power Supply
  • 50 - 350°C sample temperature
  • 100% SiH4, Ar, N2, O2
  • Multiple 4” diameter wafer capable system
  • Pieces possible by mounting or placing on 4 ” wafer