ICP Etching Recipes: Difference between revisions
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*[[media:UNAXIS-VLR-InP-Etch-Ar-200C-Recipe.pdf|Unaxis InP Etch Recipe (Cl<sub>2</sub>H<sub>2</sub> Ar 200C) Parameters]] |
*[[media:UNAXIS-VLR-InP-Etch-Ar-200C-Recipe.pdf|Unaxis InP Etch Recipe (Cl<sub>2</sub>H<sub>2</sub> Ar 200C) Parameters]] |
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*[[media:17-InP%26InGaAs_etch-Cl2H2Ar-Unaxis-VLR.pdf|InP-InGaAs Etch Profile (Cl<sub>2</sub>H<sub>2</sub> Ar 200C)]] |
*[[media:17-InP%26InGaAs_etch-Cl2H2Ar-Unaxis-VLR.pdf|InP-InGaAs Etch Profile (Cl<sub>2</sub>H<sub>2</sub> Ar 200C)]] |
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*[[media:43- |
*[[media:43-Issue_with_the_etch_of_InP-InGaAs-and-_InAlAs-b.pdf|InGaAs-InAlAs Etch Issure (Cl<sub>2</sub>H<sub>2</sub> Ar 200C)]] |
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==GaN Etch (Unaxis VLR)== |
==GaN Etch (Unaxis VLR)== |
Revision as of 21:37, 2 September 2015
Back to Dry Etching Recipes.
Si Deep RIE (PlasmaTherm/Bosch Etch)
Single-step Si Etching (not Bosch Process!) (Si Deep RIE)
ICP Etch 1 (Panasonic E626I)
SiO2 Etching (Panasonic 1)
SiNx Etching (Panasonic 1)
Al Etch (Panasonic 1)
Cr Etch (Panasonic 1)
Ti Etch (Panasonic 1)
W-TiW Etch (Panasonic 1)
GaAs-AlGaAs Etch (Panasonic 1)
- GaAs-Nanoscale Etch Recipe - PR mask - Cl2-BCl3-Ar
- AlGaAs Etch Recipes - Cl2N2
- GaAs DRIE via Etch Recipes - Cl2-BCl3-Ar PR passivation
GaN Etch (Panasonic 1)
SiC Etch (Panasonic 1)
Sapphire Etch (Panasonic 1)
ICP Etch 2 (Panasonic E640)
Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.
SiO2 Etching (Panasonic 2)
- SiO2 Vertical Etch Recipe - CHF3
- SiO2 Vertical Etch Recipe#2 - CF4/CHF3
- SiO2 Nanoscale Etch Recipe - CHF3/O2
SiNx Etching (Panasonic 2)
Al Etch (Panasonic 2)
GaAs Etch (Panasonic 2)
ICP-Etch (Unaxis VLR)
GaAs-AlGaAs Etch (Unaxis VLR)
InP-InGaAs-InAlAs Etch (Unaxis VLR)
- InP Etch Recipe (Cl2N2Ar 200C)
- InP-based Material Etch Profile (Cl2N2Ar200C)
- Unaxis InP Etch Recipe (Cl2H2 Ar 200C) Parameters
- InP-InGaAs Etch Profile (Cl2H2 Ar 200C)
- InGaAs-InAlAs Etch Issure (Cl2H2 Ar 200C)