Difference between revisions of "Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer"

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(added Tips, copied from DUV Liftoff page)
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Revision as of 16:34, 27 April 2022


Tips

Please see our Bi-Layer Lift-Off Tutorial to understand the limitations and requirements for good lift-off.

  • Remember that the PR protecting the gaps between adjacent metal traces can lift-off during the develop!
  • Need underlayer thickness approx. 2x the desired metal thickness.
  • The underlayer will develop laterally from both sides which can lift-off the imaging resist, so:
    • Minimum gap between adjacent metals should then be: greater than 0.5 * underlayer thickness
    • Want at least 30-50nm of underlayer width left to support the imaging resist, so the PR doesn't fall over/collapse.
  • Make sure to use a vertical line-of-sight evaporation such as EBeam4 or EBeam1. EBeam3 is not vertical unless special care is taken.