Difference between revisions of "Maskless Aligner (Heidelberg MLA150)"

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** Optical (laser) Autofocus in addition to Pneumatic Autofocus
** Optical (laser) Autofocus in addition to Pneumatic Autofocus
*[[MLA150 - Standard Operating Procedure]]
=== Operating Procedures ===
*[[Media:MLA150 - Standard Operating Procedure.pdf|MLA150 - Standard Operating Procedure]]
=== Video Trainings ===
* [[Part 1: Overview and basic usage]]
* [[Part 2: Focus Exposure Matrix (FEM)/Series]]
* [[Part 3: Local "Field" Alignment]]
== Design Tools/Info ==
== Design Tools/Info ==

Revision as of 15:56, 26 October 2020


Work In Progress

This article is still under construction. It may contain factual errors. Content is subject to change.

Maskless Aligner (Heidelberg MLA150)
MLA150 Heidelberg Bay 6 Photo.jpg
Tool Type Lithography
Location Bay 6
Supervisor Biljana Stamenic
Supervisor Phone (805) 893-4002
Supervisor E-Mail biljana@ece.ucsb.edu
Description Maskless I-Line Photolithography
Manufacturer Heidelberg Instruments
Model MLA150
Materials I-Line Photoresists


The MLA150 allows for arbitrary direct patterning of I-Line photoresists, directly from an uploaded CAD drawing/file (GDS, DXF, CIF etc.). The system uses a digital micromirror device ("DMD", an array of MEMS mirrors) for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.

The system has a continuous, automatic autofocus, using either a pneumatic or optical detection. This enables lithography on non-planar or curved substrates. We also have the high-aspect ratio (variable/long focal length) option installed for very thick (~70µm) photoresists.

Depending on the exposure options and write area, the MLA is able to expose a 100mm wafer in about 30min, and achieves minimum features sizes around 0.5µm, with overlay/alignment accuracy better than 200nm. Arbitrary drawings can be exposed onto any feature located on the microscope.

Greyscale lithography is capable of producing repeatable slanted or tapered structures in photoresist or photo-active dielectrics like SU-8.

Detailed Specifications

  • Wafer size:
  • Wafer / substrate thickness: Max. 9mm.
    • Thicker is possible, contact supervisor.
  • Exposure optics:
  • Alignment Accuracy: ≤ 200nm
  • Additional manufacturer options:
    • High-resolution option (Write Mode 1)
    • Extended Focus Range
    • Variable Focal Depth
    • Optical (laser) Autofocus in addition to Pneumatic Autofocus


Operating Procedures

Video Trainings

Design Tools/Info