Difference between revisions of "Oxford Etcher - Sample Size Effect on Etch Rate"
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(pasted from old Process Control Dataa: Oxford_ICP_Etcher_-_Process_Control_Data) |
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Latest revision as of 16:05, 20 March 2023
Sample Size Effect on Etch Rate (Oxford ICP Etcher)
We have found that the size of the InP piece loaded (no adhesive, onto Silicon carrier wafer) affects the etch rate, but does not affect the etch profile - ie. etches are still smooth and vertical, but etch rate varies with sample area.
InP Ridge Etch: 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
Silicon carrier, no adhesive. | |||||||
Date | Sample# | Sample Size (dimensions, mm) | Sample Size (area, mm2) | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
---|---|---|---|---|---|---|---|
1/11/22 | DJ_InPRidge | 4.5 x 2.5 | 11.25 | 602 | 64.6nm left | ~50% SiO2 masking (GCA Calibration pattern) | [1] |
1/12/22 | DJ_InPRidge | 4.5 x 3 | 13.5 | 563 | 76.4nm left | ~50% SiO2 masking (GCA Calibration pattern) | [2] |
1/12/22 | DJ_InP#3 | 4.5 x 3 | 13.5 | 612 | 71nm left | ~50% SiO2 masking (GCA Calibration pattern) | [3] |
1/26/22 | NP_? | 10 x 10 | 100 | 400-450 | ~250nm left | ~30-40% SiO2 masking (NingC's pattern) | |
1/26/22 | NP_? | 1/4 of 50mm wafer | 490 | 378 | 276nm left | ~30-40% SiO2 masking (NingC's pattern) | [1] |