Difference between revisions of "PECVD Recipes"
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=[[PECVD 1 (PlasmaTherm 790)]]= | =[[PECVD 1 (PlasmaTherm 790)]]= | ||
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− | + | ===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Plots] - SiO2, SiN and Particulate Count=== | |
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==SiO<sub>2</sub> deposition (PECVD #1)== | ==SiO<sub>2</sub> deposition (PECVD #1)== | ||
− | *[https://docs.google.com/spreadsheets/d/1uqpg3sirsRbXdTFlxZ6_k3t0ovP0MtpFtICjpH0-prs/edit#gid= | + | *[https://docs.google.com/spreadsheets/d/1uqpg3sirsRbXdTFlxZ6_k3t0ovP0MtpFtICjpH0-prs/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>] |
+ | *[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>] | ||
+ | *[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1503619544 SiO<sub>2</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier | ||
− | == | + | ==SiN deposition (PECVD #1)== |
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− | + | *[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>] | |
− | *[https://docs.google.com/spreadsheets/d/ | + | *[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>] |
− | + | *[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=604790654 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier | |
− | *[https://docs.google.com/spreadsheets/d/ | ||
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− | *[https://docs.google.com/spreadsheets/d/ | ||
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− | ==Low | + | ==Low Stress Si<sub>3</sub>N<sub>4</sub> (PECVD#1)== |
− | *[//wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf | + | *[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>] |
− | *[https://docs.google.com/spreadsheets/d/ | + | *[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1515630363 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>] |
− | *[https://docs.google.com/spreadsheets/d/ | + | *[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=934830479 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier |
==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)== | ==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)== | ||
− | *[//wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe] | + | *[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe] |
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] | *[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] | ||
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014] | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014] | ||
− | ==Cleaning | + | ==Standard Cleaning Procedure (PECVD #1)== |
− | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: | + | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. ) | #Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. ) | ||
#Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning. | #Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning. | ||
+ | # | ||
− | = | + | {| class="wikitable" |
− | + | |+Table of Cleaning Times | |
+ | !Film Dep'd | ||
+ | !Cleaning Time | ||
+ | |- | ||
+ | |SiO<sub>2</sub> | ||
+ | |TBD | ||
+ | |- | ||
+ | |Si<sub>3</sub>N<sub>4</sub> | ||
+ | |TBD | ||
+ | |- | ||
+ | |SiOxNy | ||
+ | |Same as XYZ | ||
+ | |} | ||
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− | === | + | ===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]=== |
+ | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it. | ||
− | + | =[[PECVD 2 (Advanced Vacuum)]]= | |
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− | + | ===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Plots]=== | |
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==SiO<sub>2</sub> deposition (PECVD #2)== | ==SiO<sub>2</sub> deposition (PECVD #2)== | ||
− | + | *[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''STD SiO2''" | |
− | + | *[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>] | |
− | + | *[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=2024333220 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021 | |
− | *[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= | ||
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− | *[https://docs.google.com/spreadsheets/d/ | ||
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− | *[https://docs.google.com/spreadsheets/d/ | ||
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==SiN deposition (PECVD #2)== | ==SiN deposition (PECVD #2)== | ||
− | + | *[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''Nitride2''" | |
− | + | *[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>] | |
− | + | *[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1153442266 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021 | |
− | *[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= | ||
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− | *[https://docs.google.com/spreadsheets/d/ | ||
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− | *[https://docs.google.com/spreadsheets/d/ | ||
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==Low-Stress SiN deposition (PECVD #2)== | ==Low-Stress SiN deposition (PECVD #2)== | ||
− | ''Low-Stress SilIcon Nitride (< 100 MPa)'' | + | ''Low-Stress SilIcon Nitride, Si<sub>3</sub>N<sub>4</sub> (< 100 MPa)'' |
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− | + | *[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''LSNitride2''" | |
− | *[https://docs.google.com/spreadsheets/d/ | + | ***''Old Versions of the recipe:'' |
− | *[https:// | + | ****[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018] |
− | *[https:// | + | ****[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018] |
− | + | *[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>] | |
− | *[https://docs.google.com/spreadsheets/d/ | + | *[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=268003895 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>] |
− | *[https://docs.google.com/spreadsheets/d/ | ||
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==Amorphous-Si deposition (PECVD #2)== | ==Amorphous-Si deposition (PECVD #2)== | ||
− | *[//wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] | + | *[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] |
− | *[//wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si | + | *[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress] |
− | ==Cleaning | + | ==Standard Cleaning Procedure (PECVD #2)== |
+ | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: | ||
− | + | #(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. | |
− | + | #Load the recipe for cleaning "STD CF<sub>4</sub>/O<sub>2</sub> Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning. | |
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− | + | ===[https://wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]=== | |
− | # | + | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it. |
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− | + | '''Clean Times (PECVD#2''') | |
{| class="wikitable" | {| class="wikitable" | ||
!Film Deposited | !Film Deposited | ||
Line 244: | Line 113: | ||
DI water then Isopropyl Alcohol on chamber wall & portholes | DI water then Isopropyl Alcohol on chamber wall & portholes | ||
|} | |} | ||
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=[[ICP-PECVD (Unaxis VLR)]]= | =[[ICP-PECVD (Unaxis VLR)]]= | ||
− | 2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation| | + | 2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber. |
− | The system currently has | + | The system currently has Deuterated Silane (SiD<sub>4</sub>) installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. |
− | ==== | + | ===[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Plots] - TBD=== |
− | + | ==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]== | |
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− | = | + | *[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR 250C''" |
+ | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>] | ||
+ | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1916118198 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021 | ||
− | + | ==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]== | |
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− | = | + | *[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiO2 HDR 250C''" |
− | + | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Present Data</nowiki>] | |
+ | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=939753086 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] | ||
− | == | + | ==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]== |
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− | *[https://docs.google.com/spreadsheets/d/ | + | *[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiN 250C''" |
− | *[https://docs.google.com/spreadsheets/d/ | + | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Current Process Control Data</nowiki>] |
+ | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=782128304 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] - before Oct. 2021 | ||
− | == | + | ==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]== |
− | *[https://docs.google.com/spreadsheets/d/ | + | *[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiN Low Stress 250C''" |
− | *[https://docs.google.com/spreadsheets/d/ | + | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Current Process Control Data</nowiki>] |
+ | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1024532473 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] - before Oct. 2021 | ||
− | == | + | ==Standard Cleaning Procedure [ICP-PECVD]== |
− | + | You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details. | |
− | + | *SiNx etches at 20nm/min | |
− | + | *SiO<sub>2</sub> etches at 40nm/min | |
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− | === | + | ===Standard Clean Recipe=== |
''To Be Added'' | ''To Be Added'' | ||
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Revision as of 00:09, 16 December 2021
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
PECVD 1 Plots - SiO2, SiN and Particulate Count
SiO2 deposition (PECVD #1)
- SiO2 [PECVD 1] Standard Recipe
- SiO2 [PECVD 1] Current Process Control Data
- SiO2 [PECVD 1] Historical Data - Oct. 2021 and earlier
SiN deposition (PECVD #1)
- Si3N4 [PECVD 1] Standard Recipe
- Si3N4 [PECVD 1] Current Process Control Data
- Si3N4 [PECVD 1] Historical Data - Oct. 2021 and earlier
Low Stress Si3N4 (PECVD#1)
- Low Stress Si3N4 [PECVD 1] Standard Recipe
- Low Stress Si3N4 [PECVD 1] Current Process Control Data
- Low Stress Si3N4 [PECVD 1] Historical Data - 2021-10 and earlier
SiOxNy deposition (PECVD #1)
Standard Cleaning Procedure (PECVD #1)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
- Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
Film Dep'd | Cleaning Time |
---|---|
SiO2 | TBD |
Si3N4 | TBD |
SiOxNy | Same as XYZ |
Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
PECVD 2 (Advanced Vacuum)
PECVD 2 Plots
SiO2 deposition (PECVD #2)
- SiO2 [PECVD 2] Standard Recipe - "STD SiO2"
- SiO2 [PECVD 2] Current Process Control Data
- SiO2 [PECVD 2] Historical Data - Before Oct. 2021
SiN deposition (PECVD #2)
- Si3N4 [PECVD 2] Standard Recipe - "Nitride2"
- Si3N4 [PECVD 2] Current Process Control Data
- Si3N4 [PECVD 2] Historical Data - Before Oct. 2021
Low-Stress SiN deposition (PECVD #2)
Low-Stress SilIcon Nitride, Si3N4 (< 100 MPa)
- Low Stress Si3N4 [PECVD 2] Standard Recipe - "LSNitride2"
- Old Versions of the recipe:
- Low Stress Si3N4 [PECVD 2] Current Process Control Data
- Low Stress Si3N4 [PECVD 2] Historical Data - Before Oct. 2021
Amorphous-Si deposition (PECVD #2)
Standard Cleaning Procedure (PECVD #2)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
- Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
Clean Times (PECVD#2)
Film Deposited | Cleaning Time (Dry) |
---|---|
SiO2 | 1 min. clean for every 1 min. deposition |
Si3N4 | 1 min. clean for every 7 min of deposition |
If > 29min total dep time
(Season + Dep) |
Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes |
ICP-PECVD (Unaxis VLR)
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.
The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
ICP-PECVD Plots - TBD
Low Deposition Rate SiO2 [ICP-PECVD]
- Low Deposition Rate SiO2 [ICP-PECVD] - Standard Recipe - "SiO2 LDR 250C"
- Low Deposition Rate SiO2 [ICP-PECVD] - Current Process Control Data
- Low Deposition Rate SiO2 [ICP-PECVD] - Historical Data - before Oct. 2021
High Deposition Rate SiO2 [ICP-PECVD]
- High Deposition Rate SiO2 [ICP-PECVD] Standard Recipe - "SiO2 HDR 250C"
- High Deposition Rate SiO2 [ICP-PECVD] Present Data
- High Deposition Rate SiO2 [ICP-PECVD] Historical Data
Si3N4 [ICP-PECVD]
- Si3N4 [ICP-PECVD] Standard Recipe - "SiN 250C"
- Si3N4 [ICP-PECVD] Current Process Control Data
- Si3N4 [ICP-PECVD] Historical Data - before Oct. 2021
Low Stress Si3N4 [ICP-PECVD]
- Low Stress Si3N4 [ICP-PECVD] Standard Recipe - "SiN Low Stress 250C"
- Low Stress Si3N4 [ICP-PECVD] Current Process Control Data
- Low Stress Si3N4 [ICP-PECVD] Historical Data - before Oct. 2021
Standard Cleaning Procedure [ICP-PECVD]
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min
Standard Clean Recipe
To Be Added