Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"
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m (added entry to FL cals) |
m (addded entry to fl cals, added selectivity. etch rate is 10% lower) |
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|Observations/Notes |
|Observations/Notes |
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|SEM Images (45d, cross section) |
|SEM Images (45d, cross section) |
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+ | |5/10/22 |
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+ | |NP_SiO2_Fl_09 |
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+ | |307.3 |
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+ | |1.15 |
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+ | |*etch rate seems lower* |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/a/a8/SiO2_Fl_09_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a7/SiO2_Fl_09_CS_006.jpg <nowiki>[2]</nowiki>] |
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|4/26/22 |
|4/26/22 |
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|NP_SiO2_Fl_08 |
|NP_SiO2_Fl_08 |
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|344.7 |
|344.7 |
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+ | |1.4 |
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|NP_SiO2_Fl_07 |
|NP_SiO2_Fl_07 |
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|354.7 |
|354.7 |
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+ | |1.11 |
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|NP_SiO2_Fl_06 |
|NP_SiO2_Fl_06 |
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|352.7 |
|352.7 |
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+ | |1.11 |
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− | |*need to measure PR |
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Revision as of 10:33, 11 May 2022
This page is under construction - we are in the process of standardizing and collecting process control data for this tool. -- Demis 2022-02-11
Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec | ||||||
Date | Sample # | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewalls Angle | Observations/Notes | SEM Images (45d, cross section) |
5/10/22 | NP_SiO2_Fl_09 | 307.3 | 1.15 | *etch rate seems lower* | [1] [2] | |
4/26/22 | NP_SiO2_Fl_08 | 344.7 | 1.4 | [1] [2] | ||
4/20/22 | NP_SiO2_Fl_07 | 354.7 | 1.11 | [1] [2] | ||
4/14/22 | NP_SiO2_Fl_06 | 352.7 | 1.11 | [1] [2] | ||
3/29/22 | NP_SiO2_Fl_05 | 334.7 | 1.07 | [1][2] | ||
3/09/22 | NP_SiO2_Fl_04 | 358.9 | 1.06 | [1] [2] | ||
3/02/22 | NP_SiO2_Fl_03 | 347 | 1.05 | [1] [2] | ||
2/23/22 | NP_SiO2_Fl_02 | 362.7 | 1.02 | [1] [2] |
Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec' | ||||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | Observations/Notes | SEM Image |
11/5/2021 | SOFL01 | 136 | 1.2 | [1] | ||
02/09/22 | NP_SiO2_Fl_01 | Etched for 210s, all of PR was etched off | [1] |
Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec | ||||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | Notes/Observations | SEM Images |
1/28/2021 | FE2102 | 309 | 0.99 | [2] |