Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"
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| − | |+'''ICP#1 Recipe:''' | + | |+'''ICP#1 Recipe:''' |
| − | + | 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | |
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|'''Date''' | |'''Date''' | ||
Revision as of 09:14, 23 April 2020
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
| 1/28/2019 | I11901 | 110 | 1.35 | see SEM → | [1] |
| 5/29/2019 | I11903 | 105 | 1.41 | [2] | |
| 1/13/2020 | I12001 | 78.0 | 1.06 | unusual - two regions | [3] |
| Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal". | |||||
| 1/23/2020 | I12002 | 109 | 1.16 | [4] | |
| 2/28/2020 | I12003 | 119 | 1.17 | 56.6 | [5] |
| Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data below shows etch returned to "normal". | |||||
| 3/3/2020 | I12004 | 110 | 1.05 | [6] | |