Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"
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m (added entry in ICP1 cals, added selectivity) |
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|'''Averaged Sidewall Angle (<sup>o</sup>)''' |
|'''Averaged Sidewall Angle (<sup>o</sup>)''' |
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|'''SEM Images''' |
|'''SEM Images''' |
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+ | |5/10/2022 |
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+ | |NP_ICP1_07 |
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+ | |146 |
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+ | |1.34 |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/a/a4/ICP1_07_45D_008.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a7/ICP1_07_CS_006.jpg <nowiki>[2]</nowiki>] |
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|4/26/2022 |
|4/26/2022 |
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|NP_ICP1_06 |
|NP_ICP1_06 |
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|139.4 |
|139.4 |
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+ | |1.36 |
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|[https://wiki.nanotech.ucsb.edu/w/images/5/56/ICP1_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/49/ICP1_06_CS_002.jpg <nowiki>[2]</nowiki>] |
|[https://wiki.nanotech.ucsb.edu/w/images/5/56/ICP1_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/49/ICP1_06_CS_002.jpg <nowiki>[2]</nowiki>] |
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|NP_ICP1_05 |
|NP_ICP1_05 |
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|140 |
|140 |
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+ | |1.13 |
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|[https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP1_05_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/72/ICP1_05_CS_002.jpg <nowiki>[2]</nowiki>] |
|[https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP1_05_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/72/ICP1_05_CS_002.jpg <nowiki>[2]</nowiki>] |
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|NP_ICP1_04 |
|NP_ICP1_04 |
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|140.3 |
|140.3 |
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+ | |1.24 |
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|[https://wiki.nanotech.ucsb.edu/w/images/9/98/ICP1_004_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/45/ICP1_004_CS_001.jpg <nowiki>[2]</nowiki>] |
|[https://wiki.nanotech.ucsb.edu/w/images/9/98/ICP1_004_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/45/ICP1_004_CS_001.jpg <nowiki>[2]</nowiki>] |
Revision as of 10:24, 11 May 2022
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
5/10/2022 | NP_ICP1_07 | 146 | 1.34 | [1] [2] | |
4/26/2022 | NP_ICP1_06 | 139.4 | 1.36 | [1] [2] | |
4/20/2022 | NP_ICP1_05 | 140 | 1.13 | [1] [2] | |
4/13/2022 | NP_ICP1_04 | 140.3 | 1.24 | [1] [2] | |
3/29/2022 | NP_ICP1_03 | 136.9 | 1.19 | [1][2] | |
3/8/2022 | NP_ICP1_02 | 133.7 | 1.12 | [1] [2] | |
3/2/2022 | NP_ICP1_01 | 141.4 | 1.20 | [1] [2] | |
1/7/2021 | I12101 | 118 | 1.12 | [1] | |
3/3/2020 | I12004 | 110 | 1.05 | [2] | |
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data for 3/3 shows etch returned to "normal". | |||||
2/28/2020 | I12003 | 119 | 1.17 | 56.6 | [3] |
1/23/2020 | I12002 | 109 | 1.16 | [4] | |
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal". | |||||
1/13/2020 | I12001 | 78.0 | 1.06 | unusual - two regions | [5] |
5/29/2019 | I11903 | 105 | 1.41 | [6] | |
1/28/2019 | I11901 | 110 | 1.35 | see SEM → | [7] |
OLD Etch Test Data
Alternate SiO2 etch recipe with O2 included.
ICP#1: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
1/28/2019 | I11902 | 78.1 | 0.63 | [8] | |
5/29/2019 | I11904 | 71.1 | 0.58 | [9] |