Test Data of etching SiO2 with CHF3/CF4-ICP1: Difference between revisions
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|[https://www.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf] |
|[https://www.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf] |
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|5/2019 |
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|I11903 |
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|105 |
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|1.41 |
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Revision as of 21:44, 6 June 2019
| ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | |||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
| 1/28/2019 | I11901 | 110 | 1.35 | [1] | |
| 5/2019 | I11903 | 105 | 1.41 | ||