Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)"
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| colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec |
| colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec |
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|Date |
|Date |
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|Etch Selectivity (SiO2/PR) |
|Etch Selectivity (SiO2/PR) |
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|Averaged Sidewall Angle (<sup>o</sup>) |
|Averaged Sidewall Angle (<sup>o</sup>) |
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+ | |SEM Images |
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|10/5/2018 |
|10/5/2018 |
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|0.74 |
|0.74 |
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|77.9 |
|77.9 |
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|1/28/2019 |
|1/28/2019 |
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|0.77 |
|0.77 |
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+ | |[https://wiki.nanotech.ucsb.edu/wiki/images/f/fa/SiO2_Etch_using_ICP2_with_O2-a.pdf] |
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+ | |- |
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+ | |3/6/2019 |
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+ | |I21903 |
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+ | |88.5 |
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+ | |0.80 |
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+ | |79.4 |
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+ | |[https://wiki.nanotech.ucsb.edu/wiki/images/d/dc/SiO2_Etch_using_ICP2_with_O2-3-06-2019.pdf] |
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+ | |- |
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+ | |7/12/2019 |
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+ | |I21906 |
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+ | |91.9 |
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+ | |0.69 |
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+ | |78.1 |
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+ | |[https://wiki.nanotech.ucsb.edu/wiki/images/0/04/I2190605.pdf] |
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