Unaxis VLR Etch - Process Control Data

Data - InP Ridge Etch (Unaxis VLR)

PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1

InP Ridge Etch: 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min00sec (300sec) Sample Size: 1x1cm, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive.
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (InP/SiO2)	Comments	SEM Images
3/30/22	NP_60c_004	427	11.17	*etched for 3min*	[1][2]
1/26/22	NP_1_26_003	452	260-280nm left	~30-40% SiO2 masking (NingC's pattern)	[1] [2]
1/26/22	NP_1_26_001	~400nm	240 nm left	~30-40% SiO2 masking (NingC's pattern)	[1] [2]