Difference between revisions of "Vapor HF Etch"

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(link to Vapor HF recipes)
(→‎Recipes: link to general Dry Etching recipes)
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*[[media:SPTS-Primaxx_uEtch_Presentation-a.pdf|System Manual Part A]]
*[[media:SPTS-Primaxx uEtch Presentation-a.pdf|System Manual Part A]]
*[[media:SPTS-Primaxx_uEtch_Presentation-b.pdf|System Manual Part B]]
*[[media:SPTS-Primaxx uEtch Presentation-b.pdf|System Manual Part B]]
See the [https://www.nanotech.ucsb.edu/wiki/index.php/Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29 Vapor HF Recipes] page
* See the [https://www.nanotech.ucsb.edu/wiki/index.php/Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29 Vapor HF Recipes] page for recipe specific to this tool.
* See the general [[Dry Etching Recipes]] page for a table of all etch recipes across all tools.

Revision as of 10:18, 30 April 2018

Vapor HF Etch
IMG 2416 1.jpg
Tool Type Dry Etch
Location Bay 2
Supervisor Mike Silva
Supervisor Phone (805) 893-3096
Supervisor E-Mail silva@ece.ucsb.edu
Description Vapor HF Etcher
Manufacturer SPTS Inc
Dry Etch Recipes
Sign up for this tool


The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO2 layer below) with the use of Al2O3, Al or some other metal as an etch mask at 45oC. The tool uses vapor HF (VHF), EtOH (Ethanol vapor is an Alcohol-based one, ionizing the HF and activating etching, influencing within wafer etch uniformity, and being most compatible with VHF), and N2 gases and can process small sample(s) (on a 8" Si carrier wafer) up to an 8" wafer. There are 5 standard etch recipes installed in the tool with the SiO2 undercut-etch-rate from low to high. The SiO2 undercut-etch-rate is from ~10nm/min to ~350nm/min.