PECVD-2 - a-Si Recipe and Dep process (2025)

Developed by Ryan Hersey & Skyler Palatnik, from the research group of Prof. Max Millar-Blanchaer. Nov. 2025

• Recipe Name: ★ A Si 900mT RH
• Dep Rate: ~5.5nm/min
• Stress: -700MPa
• n(1600nm) ≈ 3.68
• High uniformity for a single 100mm wafer.

Process Flow:

• (optional) wet clean
• 5min coat
• Max 60min dep before breaking it up and cleaning the chamber.
• Wet-Clean chamber walls
• Dry Clean:  2min std. clean per 1min a-Si dep.

Do not modify this recipe with discussing with Staff first (eg. Tool Supervisor), as mods usually require altering the dry clean times as well.

Recipe Parameters

Screenshot of PECVD#2 a-Si Recipe from 2025-11.

Recipe Params:

• 300°C
• 900mT
• SiH4 = 1500 sccm
• 30W (HF)