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|super= Bill Millerski *[//wiki.nanotech.ucsb.edu/w/images/7/7b/Xactic-XetchX3-System-Manual.pdf System Manual]

|super2= Bill Millerski ...terials for the chlorine-based etching are photoresist (at powers < 200 W), Ni, SiO₂, and SrF₂. The wafer chuck can be heated t

|super2= Bill Millerski **Standard unit (Aligner #1): 350-450 nm/200 W mercury lamp

|super2= Bill Millerski *ICP Power (max): 3000 W

|super2= Bill Millerski ...is used to ensure that the mask and wafer are parallel. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Inte

|super2= Bill Millerski ...'' & '''Ta₂O₅''', both of which are extremely stable w/r/to refractive index. Users typically calibrate their dep. rates prior to

|super2= Bill Millerski ...ment system, alignment error better than 0.15 um is achieved. With the 350 W Hg arc lamp, we get approximately 180 mW/cm² of i-line intensity at the wa

|super2 = Bill Millerski ...ent system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.