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- |super= Bill Millerski *[//wiki.nanotech.ucsb.edu/w/images/7/7b/Xactic-XetchX3-System-Manual.pdf System Manual] ...2 KB (323 words) - 22:03, 30 October 2023
- |super2= Bill Millerski ...terials for the chlorine-based etching are photoresist (at powers < 200 W), Ni, SiO<sub>2</sub>, and SrF<sub>2</sub>. The wafer chuck can be heated t ...3 KB (390 words) - 17:54, 28 November 2022
- |super2= Bill Millerski **Standard unit (Aligner #1): 350-450 nm/200 W mercury lamp ...5 KB (672 words) - 04:17, 6 December 2025
- |super2= Bill Millerski *ICP Power (max): 3000 W ...6 KB (879 words) - 19:06, 21 September 2025
- |super2= Bill Millerski ...is used to ensure that the mask and wafer are parallel. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Inte ...5 KB (666 words) - 04:20, 6 December 2025
- |super2= Bill Millerski ...'' & '''Ta<sub>2</sub>O<sub>5</sub>''', both of which are extremely stable w/r/to refractive index. Users typically calibrate their dep. rates prior to ...4 KB (601 words) - 22:16, 8 May 2025
- |super2= Bill Millerski ...ment system, alignment error better than 0.15 um is achieved. With the 350 W Hg arc lamp, we get approximately 180 mW/cm² of i-line intensity at the waf ...6 KB (906 words) - 02:49, 6 December 2025
- |super2 = Bill Millerski ...ent system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer. ...8 KB (1,225 words) - 04:01, 6 December 2025