Dry Etching Recipes

Process Control Data

See linked page for process control data (dep rate/stress etc. over time), for a selection of often-used thin-film depositions.

Dry Etching Tools/Materials Table

Dry Etching Recipes
	RIE Etching			ICP Etching						Oxygen Plasma Systems				Other Dry Etchers
Material	RIE 2 (MRC)	RIE 3 (MRC)	RIE 5 (PlasmaTherm)	DSEIII (PlasmaTherm)	Fluorine ICP (PlasmaTherm)	ICP Etch 1 (Panasonic E646V)	ICP Etch 2 (Panasonic E626I)	Oxford ICP (PlasmaPro 100)	ICP-Etch (Unaxis VLR)	Ashers (Technics PEII)	Plasma Clean (YES EcoClean)	UV Ozone Reactor	Plasma Activation (EVG 810)	XeF2 Etch (Xetch)	Vapor HF Etch (uETCH)	CAIBE (Oxford)
Ag																A
Al			A			R1	R1									A
Au																R1
Cr			A			R1	A									A
Cu																A
Ge						A	A							A		A
Mo																A
Nb						A	A
Ni																R1
Os						A	A
Pt																R1
Ru						A	R1									A
Si				R1	R3			A						R1		A
Ta						A	A									A
Ti						R1	A									A
Al2O3						A	R									A
Al2O3 (Sapphire)						R1	A									A
AlGaAs			R1			R1		R	GaAs-AlGaAs Etch (Unaxis VLR)							A
AlGaN								R	R1							A
AlN									R1							A
BCB						A
CdZnTe	R1															A
GaAs			R1			R1	R1	R	GaAs-AlGaAs Etch (Unaxis VLR)							A
GaN			R1			R1	A	R	R1							A
GaSb						A	A	A	GaSb Etch Unaxis VLR)							A
HfO2																A
InGaAlAs	InP-InGaAsP-InGaAlAs Etching (RIE 2)							A	InP-InGaAs-InAlAs Etch (Unaxis VLR)							A
InGaAsP	InP-InGaAsP-InGaAlAs Etching (RIE 2)							R	InP-InGaAs-InAlAs Etch (Unaxis VLR)							A
InP	InP-InGaAsP-InGaAlAs Etching (RIE 2)					A	A	R	InP-InGaAs-InAlAs Etch (Unaxis VLR)							R1
ITO	R1															A
LiNbO3																A
Photoresist & ARC		A	R		[./Https://wiki.nanotech.ucsb.edu/wiki/ICP%20Etching%20Recipes#Photoresist%20.26%20ARC%20.28Fluorine%20ICP%20Etcher.29 R4]	R	R			R	R					A
Ru						A	R
SiC						R1	A									A
SiN		SiNx Etching (RIE 3)			R4	R1	R1			A						A
SiO2		SiO2 Etching (RIE 3)			R6	R1	R1								R1	A
SiOxNy						A	A									A
SU8						A
Ta2O5						A	A									A
TiN																A
TiO2																A
W-TiW						R1	A									A
ZnO2																A
ZnS	R1															A
ZnSe	R1															A
ZrO2																A
Material	RIE 2 (MRC)	RIE 3 (MRC)	RIE 5 (PlasmaTherm)	DSEIII (PlasmaTherm)	Fluorine ICP (PlasmaTherm)	ICP Etch 1 (Panasonic E626I)	ICP Etch 2 (Panasonic E640)	Oxford ICP (PlasmaPro 100)	ICP-Etch (Unaxis VLR)	Ashers (Technics PEII)	Plasma Clean (YES EcoClean)	UV Ozone Reactor	Plasma Activation (EVG 810)	XeF2 Etch (Xetch)	Vapor HF Etch (uETCH)	CAIBE (Oxford)

Process Ranking Table

Process Level	Description of Process Level Ranking
A	Process allowed and materials available but never done
R1	Process has been ran at least once
R2	Process has been ran and/or procedure is documented or/and data available
R3	Process has been ran, procedure is documented, and data is available
R4	Process has a documented procedure with regular (≥4x per year) data or lookahead/in-Situ control available
R5	Process has a documented procedure with regular (≥4x per year) data and lookahead/in-Situ control available
R6	Process has a documented procedure, regular ( ≥4x per year) data, and control charts/limits available