Dry Etching Recipes

From UCSB Nanofab Wiki
Revision as of 22:41, 6 August 2024 by John d (talk | contribs) (deleted Unaxis Etch column)
Jump to navigation Jump to search

Process Control Data

See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches

Dry Etching Tools/Materials Table

The Key/Legend for this table's A...R6 values is at the bottom of the page.

Dry Etching Recipes
RIE Etching ICP Etching Oxygen Plasma Systems Other Dry Etchers
Material RIE 2
(MRC)
RIE 5
(PlasmaTherm)
DSEIII
(PlasmaTherm)
Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E646V)
ICP Etch 2
(Panasonic E626I)
Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII)
Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810)
XeF2 Etch
(Xetch)
Vapor HF Etch
(uETCH)
CAIBE
(Oxford)
Ag A
Al A R1 R2 A
Au R1
Cr A R1 R1 A
Cu A
Ge A R1 A A
Mo A
Nb A R1
Ni R1
Os A R1
Pt R1
Ru A R4 A
Si R1 R3 R1 R1 A
Ta A R1 A
Ti R1 R1 A
Al2O3 A R3 A
Al2O3 (Sapphire) R1 R1 A
AlGaAs R1 R1 R3 A
AlGaN R2 A
AlN A
BCB A
CdZnTe R1 A
GaAs R1 R1 R3 R3 A
GaN R1 R1 R1 R2 A
GaSb A R1 R1 A
HfO2 A
InGaAlAs InP-InGaAsP-InGaAlAs Etching (RIE 2) R1 A
InGaAsP InP-InGaAsP-InGaAlAs Etching (RIE 2) R3 A
InP InP-InGaAsP-InGaAlAs Etching (RIE 2) A R1 R6 R1
ITO R1 A
LiNbO3 A
Photoresist

& ARC

R R4 R R3 R R A
SiC R1 R1 A
SiN R4 R1 R3 A A
SiO2 R6 R1 R6 R1 A
SiOxNy A R1 A
SU8 A
Ta2O5 A R1 A
TiN A
TiO2 A
W-TiW R1 R1 A
ZnO2 A
ZnS R1 A
ZnSe R1 A
ZrO2 A
Material RIE 2
(MRC)
RIE 5
(PlasmaTherm)
DSEIII
(PlasmaTherm)
Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E626I)
ICP Etch 2
(Panasonic E640)
Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII)
Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810)
XeF2 Etch
(Xetch)
Vapor HF Etch
(uETCH)
CAIBE
(Oxford)

Process Ranking Table

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level Description of Process Level Ranking
A Process Allowed and materials available but never done
R1 Process has been run at least once
R2 Process has been run and/or procedure is documented or/and data available
R3 Process has been run, procedure is documented, and data is available
R4 Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available
R5 Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available
R6 Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available