PECVD1 Recipes: Difference between revisions
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* [[media:PECVD1-SiON-Recipe.pdf|Low Stress Si<sub>3</sub>N<sub>4</sub> - Variable Stress Plot]] |
* [[media:PECVD1-SiON-Recipe.pdf|Low Stress Si<sub>3</sub>N<sub>4</sub> - Variable Stress Plot]] |
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*Deposition rate~11. |
*Deposition rate~11.25nm/min (users must calibrate this prior to critical deps) |
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*HF e.r.~ |
*HF e.r.~89nm/min |
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*Stress~ |
*Stress~446MPa |
||
*Refractive Index~1.940 |
*Refractive Index~1.940 |
||
Revision as of 15:34, 14 October 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data October 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.25nm/min (users must calibrate this prior to critical deps)
- HF e.r.~89nm/min
- Stress~446MPa
- Refractive Index~1.940
SiO2 deposition (PECVD #1)
- Deposition rate~35.22nm/min (users must calibrate this prior to critical deps)
- HF e.r.~646nm/min
- Stress~-407MPa
- Refractive Index~1.460
SiOxNy deposition (PECVD #1)
- SiOxNy Deposition Recipes - Varying N/O Ratio
- SiOxNy Stress/Index vs. O/N Ratio
- SiOxNy Recipe
- SiOxNy Data October 2014
- SiOxNy 3000A Thickness uniformity 2014
- Deposition rate~14.50nm/min (users must calibrate this prior to critical deps)
- HF e.r.~399nm/min
- Stress~145MPa
- Refractive Index~1.714