PECVD1 Recipes: Difference between revisions

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*[[media:PECVD1-SiON-Plot.pdf|SiO<sub>x</sub>N<sub>y</sub> Stress/Index vs. O/N Ratio]]
*[[media:PECVD1-SiON-Plot.pdf|SiO<sub>x</sub>N<sub>y</sub> Stress/Index vs. O/N Ratio]]
*[[media:PECVD1-LS SION recipe 2014.pdf|SiO<sub>x</sub>N<sub>y</sub> Recipe]]
*[[media:PECVD1-LS SION recipe 2014.pdf|SiO<sub>x</sub>N<sub>y</sub> Recipe]]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data November 2014]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data December 2014]
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub> 3000A Thickness uniformity 2014]
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub> 3000A Thickness uniformity 2014]



Revision as of 23:42, 3 December 2014

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

  • Deposition rate~11.23nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~89nm/min
  • Stress~450MPa
  • Refractive Index~1.942

SiO2 deposition (PECVD #1)

  • Deposition rate~35.52nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~645nm/min
  • Stress~-408MPa
  • Refractive Index~1.461

SiOxNy deposition (PECVD #1)

  • Deposition rate~14.99nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~417nm/min
  • Stress~133MPa
  • Refractive Index~1.714