PECVD1 Recipes: Difference between revisions
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*Refractive Index~1.461 |
*Refractive Index~1.461 |
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== Other recipes (PECVD1)== |
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== LS SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1) == |
== LS SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1) == |
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Revision as of 16:54, 10 December 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data 2014
- SiN 1000A Thickness uniformity 2014
- [=sharing SiN Data 2015]
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
SiO2 deposition (PECVD #1)
- Deposition rate~35.52nm/min (users must calibrate this prior to critical deps)
- HF e.r.~645nm/min
- Stress~-408MPa
- Refractive Index~1.461
Other recipes (PECVD1)
LS SiOxNy deposition (PECVD #1)
- SiOxNy Deposition Recipes - Varying N/O Ratio
- SiOxNy Stress/Index vs. O/N Ratio
- SiOxNy Recipe
- SiOxNy Data December 2014
- SiOxNy 3000A Thickness uniformity 2014