Dry Etching Recipes: Difference between revisions

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| width="85" bgcolor="#DAF1FF" | [[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]
| width="85" bgcolor="#DAF1FF" | [[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]
| width="85" bgcolor="#DAF1FF" | [[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br>(EVG 810)]]
| width="85" bgcolor="#DAF1FF" | [[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br>(EVG 810)]]
| width="85" bgcolor="#DAF1FF" | [[XeF2 Etch (Xetch)|XeF2 Etch<br>(Xetch)]]
| width="85" bgcolor="#DAF1FF" | [[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br>(Xetch)]]
| width="85" bgcolor="#DAF1FF" | [[Vapor HF Etch|Vapor HF Etch<br>(uETCH)]]
| width="85" bgcolor="#DAF1FF" | [[Vapor HF Etch|Vapor HF Etch<br>(uETCH)]]
| width="85" bgcolor="#DAF1FF" | [[CAIBE (Oxford Ion Mill)|CAIBE<br>(Oxford)]]
| width="85" bgcolor="#DAF1FF" | [[CAIBE (Oxford Ion Mill)|CAIBE<br>(Oxford)]]
Line 738: Line 738:
| bgcolor="#DAF1FF" | [[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]
| bgcolor="#DAF1FF" | [[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]
| bgcolor="#DAF1FF" | [[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br>(EVG 810)]]
| bgcolor="#DAF1FF" | [[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br>(EVG 810)]]
| bgcolor="#DAF1FF" | [[XeF2 Etch (Xetch)|XeF2 Etch<br>(Xetch)]]
| bgcolor="#DAF1FF" | [[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br>(Xetch)]]
| bgcolor="#DAF1FF" | [[Vapor HF Etch|Vapor HF Etch<br>(uETCH)]]
| bgcolor="#DAF1FF" | [[Vapor HF Etch|Vapor HF Etch<br>(uETCH)]]
| bgcolor="#DAF1FF" | [[CAIBE (Oxford Ion Mill)|CAIBE<br>(Oxford)]]
| bgcolor="#DAF1FF" | [[CAIBE (Oxford Ion Mill)|CAIBE<br>(Oxford)]]

Revision as of 22:36, 16 December 2015

  • R = Recipe is available. Clicking this link will take you to the recipe.
  • A = Material is available for use, but no recipes are provided.
Dry Etching Recipes
RIE Etching ICP Etching Oxygen Plasma Systems Other Dry Etchers
Material RIE 1
(Retired) 		RIE 2
(MRC) 		RIE 3
(MRC) 		RIE 5
(PlasmaTherm) 		Si Deep RIE
(PTI/Bosch) 		ICP Etch 1
(Panasonic 1) 		ICP Etch 2
(Panasonic 2) 		ICP-Etch
(Unaxis VLR) 		Ashers
(Technics PEII) 		Plasma Clean
(Gasonics 2000) 		UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)
Al A R1 R1
Ti R1 A
Cr A R1 A
Ge
Ag
Pt R1
Au R1
Ni R1
Cu
Ru
Mo
Ta
W-TiW R1 A
Al2O3
HfO2
ITO R1
SiO2 R1 R1 R1
SiN R1 R1
SiOxNy
Ta2O5
TiO2
TiN
ZnO2
ZrO2
GaAs R1 R1 R1 R1
AlGaAs R1 R1 R1
InGaAlAs R1 R1
InGaAsP R1
InP R1 R1
GaN R1 R1 R1
AlGaN
AlN
GaN
AlGaN
AlN
GaSb
CdZnTe R1
ZnSe
Si R1 R1
SiC R1 A
Sapphire R1 A
Material RIE 1
(Retired) 		RIE 2
(MRC) 		RIE 3
(MRC) 		RIE 5
(PlasmaTherm) 		Si Deep RIE
(PlasmaTherm/Bosch Etch) 		ICP Etch 1
(Panasonic E626I) 		ICP Etch 2
(Panasonic E640) 		ICP-Etch
(Unaxis VLR) 		Ashers
(Technics PEII) 		Plasma Clean
(Gasonics 2000) 		UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)
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