Dry Etching Recipes: Difference between revisions

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Revision as of 20:01, 8 January 2018

  • R = Recipe is available. Clicking this link will take you to the recipe.
  • A = Material is available for use, but no recipes are provided.
Dry Etching Recipes
RIE Etching ICP Etching Oxygen Plasma Systems Other Dry Etchers
Material RIE 1
(Retired) 		RIE 2
(MRC) 		RIE 3
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Si Deep RIE
(PTI/Bosch) 		ICP Etch 1
(Panasonic 1) 		ICP Etch 2
(Panasonic 2) 		ICP-Etch
(Unaxis VLR) 		Ashers
(Technics PEII) 		Plasma Clean
(Gasonics 2000) 		UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)
Ag
Al A R1 R1
Au R1
Cr A R1 A
Cu
Ge A
Mo
Ni R1
Pt R1
Ru
Si A R1 R1
Ta
Ti R1 A
Al2O3
Al2O3 (Sapphire) R1 A
AlGaAs R1 R1 GaAs-AlGaAs Etch (Unaxis VLR)
AlGaN R1
AlN R1
CdZnTe R1
GaAs R1 R1 R1 GaAs-AlGaAs Etch (Unaxis VLR)
GaN GaN Etch (RIE 5) R1 R1
GaSb A GaSb Etch Unaxis VLR)
HfO2
InGaAlAs InP-InGaAsP-InGaAlAs Etching (RIE 2) InP-InGaAs-InAlAs Etch (Unaxis VLR)
InGaAsP InP-InGaAsP-InGaAlAs Etching (RIE 2) InP-InGaAs-InAlAs Etch (Unaxis VLR)
InP InP-InGaAsP-InGaAlAs Etching (RIE 2) A A InP-InGaAs-InAlAs Etch (Unaxis VLR)
ITO R1
Photoresist

& ARC

A A A A A A
SiC R1 A
SiN SiNx Etching (RIE 3) R1 R1 A
SiO2 SiO2 Etching (RIE 3) R1 R1 R1
SiOxNy
Ta2O5 A
TiN
TiO2
W-TiW R1 A
ZnO2
ZnS R1
ZnSe R1
ZrO2
Material RIE 1
(Retired) 		RIE 2
(MRC) 		RIE 3
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Si Deep RIE
(PlasmaTherm/Bosch Etch) 		ICP Etch 1
(Panasonic E626I) 		ICP Etch 2
(Panasonic E640) 		ICP-Etch
(Unaxis VLR) 		Ashers
(Technics PEII) 		Plasma Clean
(Gasonics 2000) 		UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)
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