PECVD 2 (Advanced Vacuum): Difference between revisions
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|picture=PECVD2.jpg |
|picture=PECVD2.jpg |
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|type = Vacuum Deposition |
|type = Vacuum Deposition |
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|super= |
|super= Brian Lingg |
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|phone=(805)839-3918x219 |
|phone=(805)839-3918x219 |
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|location=Bay 2 |
|location=Bay 2 |
Revision as of 19:51, 25 February 2019
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About
This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.