PECVD1 Wafer Coating Process: Difference between revisions
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=== PECVD#1 deposition - 300nm SiN film @250°C === |
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The wafers are ordered from SVM. These are low particle count 4" Si wafer where particle count is very low <100. |
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a)Log in to PECVD #1 (Staff account) |
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b)Edit standard recipes (for seasoning, deposition, and cleaning). You can '''ONLY''' change the time in recipes. |
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* •Seasoning recipe name: |
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* •Deposition recipe name: |
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* •Cleaning recipe name: |
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c)Load the recipe for seasoning, and run it. The goal of this step is to coat chamber walls and prepare it for deposition. |
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d)Vent the chamber and load 4"Si wafer (place in in the center of platen). You can place small pieces around, to protect wafer from moving |
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e)Pump down and load the recipe for deposition. |
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f) Edit the recipe for deposition, change the time ONLY. |
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g) Run deposition |
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h) Wait for deposition to be finished. Unload the wafer |
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i) Wipe sidewall first with water then with IPA. |
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j) Load recipe for cleaning. Edit the recipe and enter required time for cleaning. |