PECVD1 Wafer Coating Process: Difference between revisions

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The wafers used for process calibration are ordered from SVM. These are low particle count 4" Si wafers (particle count<100). The wafers are scanned before and after deposition. They are not re-used. Handling the wafers is important and each step could contribute in adding new particles.
The wafers used for process calibration are ordered from SVM. These are low particle count 4" Si wafers (particle count<100). The wafers are scanned before and after deposition. They are not re-used. Handling the wafers is important and each step could contribute in adding new particles.The section bellow describes how to run standard recipes for SiN a,d SiO2 at 250C.


== SiN @250C ==
== SiN @250C ==
# Log in to PECVD #1 (Staff account).
# Log in to PECVD #1
⚫
# Seasoning
# Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
⚫
#* Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
⚫
#* Seasoning recipe name
#* Deposition recipe name
# Deposition
⚫
#* Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
⚫
#* Cleaning recipe name:
⚫
#* Pump down.
⚫
# Load the seasoning recipe, and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
⚫
#* Load the deposition recipe (SiN@250C), and run it.
⚫
# Vent the chamber and load a 4"Si wafer (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
#* Unload the wafer.
⚫
# Pump down.
⚫
# Cleaning
⚫
# Load the deposition recipe, and run it.
⚫
#* Wipe sidewall first with DI water, followed by IPA.
# Wait for deposition to be finished. Unload the wafer.
⚫
#* Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
⚫
# Wipe sidewall first with DI water, followed by IPA.
⚫
#* Log out
⚫
# Load recipe for cleaning. Edit the recipe and enter required time for cleaning.
⚫
# Log out


== SiO2 @250C ==
== SiO2 @250C ==
# Log in to PECVD #1 (Staff account).
#Log in to PECVD #1
⚫
# Seasoning
# Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
⚫
#* Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
⚫
#* Seasoning recipe name
#* Deposition recipe name
# Deposition
⚫
#* Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
⚫
#* Cleaning recipe name:
⚫
#* Pump down.
⚫
# Load the seasoning recipe, and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
⚫
#* Load the deposition recipe( SiO2@250C), and run it.
⚫
# Vent the chamber and load a 4"Si wafer (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
#* Unload the wafer.
⚫
# Pump down.
⚫
# Cleaning
⚫
# Load the deposition recipe, and run it.
⚫
#* Wipe sidewall first with DI water, followed by IPA.
# Wait for deposition to be finished. Unload the wafer.
⚫
#* Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning.
⚫
# Wipe sidewall first with DI water, followed by IPA.
⚫
#* Log out
⚫
# Load recipe for cleaning. Edit the recipe and enter required time for cleaning.
⚫
# Log out

Revision as of 23:09, 22 April 2020

The wafers used for process calibration are ordered from SVM. These are low particle count 4" Si wafers (particle count<100). The wafers are scanned before and after deposition. They are not re-used. Handling the wafers is important and each step could contribute in adding new particles.The section bellow describes how to run standard recipes for SiN a,d SiO2 at 250C.

SiN @250C

  1. Log in to PECVD #1
  2. Seasoning
    • Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe (SiN@250C), and run it.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
    • Log out

SiO2 @250C

  1. Log in to PECVD #1
  2. Seasoning
    • Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe( SiO2@250C), and run it.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning.
    • Log out
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