Dry Etching Recipes: Difference between revisions

Revision as of 15:59, 16 August 2022

See linked page for process control data (dep rate/stress etc. over time), for a selection of often-used thin-film depositions.

Dry Etching Recipes
	RIE Etching			ICP Etching						Oxygen Plasma Systems				Other Dry Etchers
Material	RIE 2 (MRC)	RIE 3 (MRC)	RIE 5 (PlasmaTherm)	DSEIII (PlasmaTherm)	Fluorine ICP (PlasmaTherm)	ICP Etch 1 (Panasonic E626I)	ICP Etch 2 (Panasonic E640)	Oxford ICP (PlasmaPro 100)	ICP-Etch (Unaxis VLR)	Ashers (Technics PEII)	Plasma Clean (YES EcoClean)	UV Ozone Reactor	Plasma Activation (EVG 810)	XeF2 Etch (Xetch)	Vapor HF Etch (uETCH)	CAIBE (Oxford)
Ag																A
Al			A			R1	R1									A
Au																R1
Cr			A			R1	A									A
Cu																A
Ge						A	A							A		A
Mo																A
Nb						A	A
Ni																R1
Os						A	A
Pt																R1
Ru						A	R1									A
Si				R1	R1			A						R1		A
Ta						A	A									A
Ti						R1	A									A
Al₂O₃						A	R									A
Al₂O_{3 (Sapphire)}						R1	A									A
AlGaAs			R1			R1		R	GaAs-AlGaAs Etch (Unaxis VLR)							A
AlGaN								R	R1							A
AlN									R1							A
BCB						A
CdZnTe	R1															A
GaAs			R1			R1	R1	R	GaAs-AlGaAs Etch (Unaxis VLR)							A
GaN			R1			R1	A	R	R1							A
GaSb						A	A	A	GaSb Etch Unaxis VLR)							A
HfO₂																A
InGaAlAs	InP-InGaAsP-InGaAlAs Etching (RIE 2)							A	InP-InGaAs-InAlAs Etch (Unaxis VLR)							A
InGaAsP	InP-InGaAsP-InGaAlAs Etching (RIE 2)							R	InP-InGaAs-InAlAs Etch (Unaxis VLR)							A
InP	InP-InGaAsP-InGaAlAs Etching (RIE 2)					A	A	R	InP-InGaAs-InAlAs Etch (Unaxis VLR)							R1
ITO	R1															A
LiNbO3																A
Photoresist & ARC		A	R		R	R	R			R	R					A
Ru						A	R
SiC						R1	A									A
SiN		SiN_x Etching (RIE 3)			A	R1	R1			A						A
SiO₂		SiO₂ Etching (RIE 3)			R1	R1	R1								R1	A
SiOxNy						A	A									A
SU8						A
Ta₂O₅						A	A									A
TiN																A
TiO₂																A
W-TiW						R1	A									A
ZnO₂																A
ZnS	R1															A
ZnSe	R1															A
ZrO₂																A
Material	RIE 2 (MRC)	RIE 3 (MRC)	RIE 5 (PlasmaTherm)	DSEIII (PlasmaTherm)	Fluorine ICP (PlasmaTherm)	ICP Etch 1 (Panasonic E626I)	ICP Etch 2 (Panasonic E640)	Oxford ICP (PlasmaPro 100)	ICP-Etch (Unaxis VLR)	Ashers (Technics PEII)	Plasma Clean (YES EcoClean)	UV Ozone Reactor	Plasma Activation (EVG 810)	XeF2 Etch (Xetch)	Vapor HF Etch (uETCH)	CAIBE (Oxford)

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 | bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br><span style="font-size: 88%;">(Unaxis VLR)</span>]]
 | bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]]
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-| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Clean_.28Gasonics_2000.29|Plasma Clean<br><span style="font-size: 88%;">(Gasonics 2000)</span>]]
 | bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]]
 | bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]
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-|A
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 | bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br><span style="font-size: 88%;">(Unaxis VLR)</span>]]
 | bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]]
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-| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Clean_.28Gasonics_2000.29|Plasma Clean<br><span style="font-size: 88%;">(Gasonics 2000)</span>]]
 | bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]]
 | bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]