Direct-Write Lithography Recipes: Difference between revisions
(→Maskless Aligner (Heidelberg MLA150): links to MJB/MA6 for Flood exp) |
(linkto nLOF2020) |
||
| Line 15: | Line 15: | ||
Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns. |
Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns. |
||
{| class="wikitable |
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1" |
||
|- bgcolor="#D0E7FF" |
|- bgcolor="#D0E7FF" |
||
! width="100" |Resist |
! width="100" |Resist |
||
| Line 29: | Line 29: | ||
! width="300" |Comments |
! width="300" |Comments |
||
|- |
|- |
||
|AZ4110 |
|||
|[[:File:AXP4000pb-Datasheet.pdf|AZ4110]] |
|||
|4 krpm, 30s |
|4 krpm, 30s |
||
|95°C, 60s |
|95°C, 60s |
||
| Line 111: | Line 111: | ||
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.'' |
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.'' |
||
{| class="wikitable |
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1" |
||
|- bgcolor="#D0E7FF" |
|- bgcolor="#D0E7FF" |
||
! width="100" |Resist |
! width="100" |Resist |
||
| Line 139: | Line 139: | ||
|Used UCSB design. Good for up to ~1.3um open line space. |
|Used UCSB design. Good for up to ~1.3um open line space. |
||
|- |
|- |
||
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]] |
|||
|AZnLOF2020 |
|||
|4 krpm, 30s |
|4 krpm, 30s |
||
|110°C, 60s |
|110°C, 60s |
||
| Line 170: | Line 170: | ||
===Greyscale Lithography (MLA150)=== |
===Greyscale Lithography (MLA150)=== |
||
''AZ4620 is the manufacturer-recommended PR for greyscale litho.'' |
''AZ4620 is the manufacturer-recommended PR for greyscale litho.'' |
||
{| class="wikitable |
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1" |
||
|- bgcolor="#D0E7FF" |
|- bgcolor="#D0E7FF" |
||
! width="100" |Resist |
! width="100" |Resist |
||
Revision as of 19:16, 1 December 2022
Maskless Aligner (Heidelberg MLA150)
Photolithography Recipes for the Heidelberg MLA150. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.
These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.
Any I-Line PR is usable, although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.
Positive Resist (MLA150)
We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies, compensate using CD Bias as described here.
Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.
| Resist | Spin Cond. | Bake | Thickness | Laser (nm) | Exposure Dose (mJ/cm2) | DeFocus | PEB* | Developer | Developer Time | Comments |
|---|---|---|---|---|---|---|---|---|---|---|
| AZ4110 | 4 krpm, 30s | 95°C, 60s | ~ 1.1 µm | 405 | 240 | 5 | none | AZ400K:DI 1:4 | 50s | Used HIMT design (good for isolated lines 0.8-1um) |
| AZ4330 | 4 krpm, 30s | 95°C, 60s | ~ 3.3 µm | 405 | 320 | 6 | none | AZ400K:DI 1:4 | 90s | Used HIMT design |
| AZ4620 | ||||||||||
| SPR 220-3.0 | 2.5 krpm, 30s | 115°C, 90s | ~ 2.7 µm | 405 | 325 | - 4 | 115°C, 90s | AZ300MIF | 60s | Used HIMT design. 0.6-0.9µm line/space. |
| SPR 955-CM0.9 | 3 krpm, 30s | 95°C, 90s | ~ 0.9 µm | 405 | 250 | - 7 | 110°C, 90s | AZ300MIF | 60s | Used HIMT design |
| THMR-3600HP | 1.5 krpm, 45s;
250 rpm/s |
100°C, 60s | 0.430µm | 405 | 180–220 | -4 | 100°C, 60s | AZ300MiF | 20s | ~0.4nm line/space:
lower dose for clear-field, higher dose for dark-field. |
| *PEB: Post-exposure bake | ||||||||||
Negative Resist (MLA150)
We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.
| Resist | Spin Cond. | Bake | Thickness | Laser (nm) | Exposure Dose (mJ/cm2) | DeFocus | PEB* | Flood* | Developer | Developer Time | Comments |
|---|---|---|---|---|---|---|---|---|---|---|---|
| AZ5214 | 6 krpm, 30s | 95°C, 60s | ~ 1.0 µm | 375 | 35 | - 5 | 110°C, 60s | 60" | AZ300MIF | 60s | Used UCSB design. Good for up to ~1.3um open line space. |
| AZnLOF2020 | 4 krpm, 30s | 110°C, 60s | ~ 2.1µm | 375 | 340 | - 3 | 110°C, 60s | none | AZ300MIF | 90s | Used UCSB design. Good for 2um open line space. |
| SU-8 2075 | ~70µm | 375 | Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end. | ||||||||
| *PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal, and requires Flood Exposure with the MA6 or MJB aligner afterwards, before developing. | |||||||||||
Greyscale Lithography (MLA150)
AZ4620 is the manufacturer-recommended PR for greyscale litho.
| Resist | Spin Cond. | Bake | Thickness | Exposure Dose (mJ/cm2) | Focus Offset | PEB | Flood | Developer | Developer Time | Comments |
|---|---|---|---|---|---|---|---|---|---|---|
| AZ4620 | ? krpm/30” | 95°C, 60” | 60" | AZ300MIF | 60s |
|