Test Data of etching SiO2 with CHF3/CF4: Difference between revisions
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!Comments |
!Comments |
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!SEM Images; |
!SEM Images; |
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|1/11/23 |
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|ND_Pan2_011123 |
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|142.9 |
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|1.11 |
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|[https://wiki.nanotech.ucsb.edu/w/images/1/18/30_pan2_011123_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/eb/Cs_pan2_011123_002.jpg <nowiki>[CS]</nowiki>] |
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|12/15/22 |
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|ND_Pan2_121522 |
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|148 |
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|1.10 |
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|[https://wiki.nanotech.ucsb.edu/w/images/a/a8/30D_pan2_121522_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/3/33/CS_pan2_121522_002.jpg <nowiki>[CS]</nowiki>] |
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|12/09/22 |
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|ND_Pan2_120922 |
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|138 |
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|1.12 |
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|[https://wiki.nanotech.ucsb.edu/w/images/b/b3/30D_pan2_120922_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/9/99/CS_pan2_120922_002.jpg <nowiki>[CS]</nowiki>] |
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|11/18/22 |
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|ND_Pan2_111822 |
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|154 |
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|1.33 |
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|[https://wiki.nanotech.ucsb.edu/w/images/8/82/30D_pan2_111822_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/c/c9/CS_pan2_111822_002.jpg <nowiki>[CS]</nowiki>] |
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|11/07/22 |
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|ND_Pan2_110722 |
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|155.7 |
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|1.18 |
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|[https://wiki.nanotech.ucsb.edu/w/images/f/f1/30D_pan2_110722_002.jpg <nowiki>[30]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/43/CS_pan2_110722_003.jpg <nowiki>[CS]</nowiki>] |
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|10/21/22 |
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|ND_Pan2_102122 |
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|148.6 |
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|1.37 |
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|[https://wiki.nanotech.ucsb.edu/w/images/f/f5/30D_pan2_102122_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/3d/CS_pan2_102122_002.jpg <nowiki>[CS]</nowiki>] |
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|10/10/22 |
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|ND_Pan2_101022 |
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|118.3 |
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|1.07 |
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|[https://wiki.nanotech.ucsb.edu/w/images/7/7c/30D_pan2_101022_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/9/9b/CS_pan2_101022_003.jpg <nowiki>[CS]</nowiki>] |
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|10/3/22 |
|10/3/22 |
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|1.14 |
|1.14 |
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|Samples from old wafer |
|Samples from old wafer |
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|[https://wiki.nanotech.ucsb.edu/w/images/8/8e/CS_Pan2n_092622_002.jpg <nowiki>[CS]</nowiki>] |
|[https://wiki.nanotech.ucsb.edu/w/images/7/79/45D_Pan2o_092622_002.jpg <nowiki>[45D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/8e/CS_Pan2n_092622_002.jpg <nowiki>[CS]</nowiki>] |
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|9/12/22 |
|9/12/22 |
Latest revision as of 20:15, 11 January 2023
ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Comments | SEM Images; |
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1/11/23 | ND_Pan2_011123 | 142.9 | 1.11 | [30D][CS] | |
12/15/22 | ND_Pan2_121522 | 148 | 1.10 | [30D][CS] | |
12/09/22 | ND_Pan2_120922 | 138 | 1.12 | [30D][CS] | |
11/18/22 | ND_Pan2_111822 | 154 | 1.33 | [30D][CS] | |
11/07/22 | ND_Pan2_110722 | 155.7 | 1.18 | [30] [CS] | |
10/21/22 | ND_Pan2_102122 | 148.6 | 1.37 | [30D] [CS] | |
10/10/22 | ND_Pan2_101022 | 118.3 | 1.07 | [30D] [CS] | |
10/3/22 | ND_Pan2_100322 | 143.1 | 1.23 | [30D] [CS] | |
9/26/22 | ND_Pan2n_092622 | 131.4 | 1.40 | Samples from new wafer | [30D] [CS] |
9/26/22 | ND_Pan2o_092622 | 130.6 | 1.14 | Samples from old wafer | [45D] [CS] |
9/12/22 | ND_Pan2_091222 | 156 | 1.33 | Higher etch rate/selectivity, may be due to new Si wafer | [30D] [CS] |
8/26/22 | ND_Pan2_082622 | 144.3 | 1.22 | [30D] [CS] | |
8/8/2022 | ND_Pan2_080822 | 134.3 | 1.12 | [30D] [CS] | |
7/29/2022 | ND_Pan2_072922 | 142.3 | 1.20 | [30D] [CS] | |
7/15/2022 | ND_Pan2_071522 | 139.1 | 1.20 | [45D][CS] | |
5/5/2022 | NP_ICP2_07 | 170 | 1.11 | Right after Quartz Top-Plate Temperature reduced 100°C-->50°C.
Etch Characteristics look similar to before. |
[1] [2] |
4/26/2022 | NP_ICP2_06 | 176.3 | 1.14 | [1] [2] | |
4/20/2022 | NP_ICP2_05 | 171.7 | 1.13 | [1] [2] | |
4/12/2022 | NP_ICP2_04 | 167.9 | 1.17 | [1] [2] | |
3/30/2022 | NP_ICP2_03 | 164 | 1.23 | [1] [2] | |
3/8/2022 | NP_ICP2_02 | 144 | 1.02 | [1] [2] | |
3/2/2022 | NP_ICP2_01 | 169.6 | 1.29 | [1] [2] | |
8/9/2021 | I22105 | 140 | 0.97 | After etching diamond sample for 1 hour using Cl2/Ar. Found
chamber/etches are ok. |
[1] |
8/9/2021 | I22104 | 147 | 1.06 | Before etching diamond sample for 1 hour using Cl2/Ar | [2] |
7/21/2021 | I22103 | 134 | 1.09 | Investigating reports of low etch rate | [3] |
5/19/2021 | I22102 | 163 | 1.11 | Etch time=130 sec | [4] |
1/7/2021 | I22101 | 144 | 1.20 | [5] | |
8/9/2020 | I22002 | 102 | 0.86 | caused by air leaking to CHF3 channel | [6] |
1/16/2020 | I22001 | 149 | 1.21 | [7] | |
7/18/2019 | I21905 | 162 | 1.37 | [8] | |
3/6/2019 | I21904 | 151 | 1.23 | 85.6 | [9] |
1/28/2019 | I21901 | 146 | 1.23 | [10] | |
10/5/2018 | SiO2#02 | 160 | 1.2 | 82.1 | [11] |
Alternate Data (not updated)
We stopped taking data for the following table in 2019, use the above data instead.