Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"
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|'''Etch Rate (nm/min)''' |
|'''Etch Rate (nm/min)''' |
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|'''Etch Selectivity (SiO2/PR)''' |
|'''Etch Selectivity (SiO2/PR)''' |
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+ | |'''Comments''' |
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− | |'''Averaged Sidewall Angle (<sup>o</sup>)''' |
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|'''SEM Images''' |
|'''SEM Images''' |
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+ | |- |
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+ | |01/11/2023 |
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+ | |ND_Pan1_011123 |
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+ | |120 |
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+ | |1.28 |
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+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/4/40/30D_pan1_011123_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/5/52/Cs_pan1_011123_002.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |12/14/2022 |
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+ | |ND_Pan1_121422 |
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+ | |118.6 |
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+ | |1.30 |
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+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/d/d6/30D_pan1_121422_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/2/20/CS_pan1_121422_002.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |12/09/2022 |
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+ | |ND_Pan1_120922 |
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+ | |100.6 |
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+ | |1.01 |
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+ | |double AuPd coat maybe blur image |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/c/c9/30D_pan1_120922_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/9/97/CS_pan1_120922_002.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |11/18/2022 |
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+ | |ND_Pan1_111822 |
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+ | |132.6 |
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+ | |1.25 |
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+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/1/14/30D_pan1_111822_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/3/35/CS_pan1_111822_002.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |11/07/2022 |
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+ | |ND_Pan1_110722 |
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+ | |125.7 |
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+ | |1.35 |
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+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/5/54/30D_pan1_110722_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/81/CS_pan1_110722_002.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |10/21/2022 |
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+ | |ND_Pan1_102122 |
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+ | |114.3 |
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+ | |1.15 |
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+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/0/03/30D_pan1_102122_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/2/29/CS_pan1_102122_002.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |10/10/2022 |
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+ | |ND_Pan1_101022 |
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+ | |127.4 |
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+ | |1.25 |
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+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/4/40/30D_pan1_101022_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/1/17/CS_pan1_101022_002.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |10/3/2022 |
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+ | |ND_Pan1_100322 |
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+ | |132.9 |
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+ | |1.19 |
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+ | |High etch rate and selectivity. |
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+ | |||
+ | May be due to angled ridge. |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/1/1f/30D_10302022_pan1_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/f/f1/CS_10302022_pan1_002.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |9/26/2022 |
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+ | |ND_Pan1n_092622 |
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+ | |111.1 |
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+ | |0.90 |
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+ | |This is the new wafer |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/6/68/30D_Pan1n_092622_002.jpg <nowiki>[30D]</nowiki>] [[https://wiki.nanotech.ucsb.edu/w/images/c/c7/CS_Pan1n_092622_002.jpg <nowiki>CS]</nowiki>] |
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+ | |- |
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+ | |9/26/2022 |
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+ | |ND_Pan1o_092622 |
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+ | |114.3 |
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+ | |1.01 |
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+ | |This is the old wafer |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/0/07/45D_Pan1o_092622_002.jpg <nowiki>[45D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/b/b7/CS_Pan1o_092622_002.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |9/12/2022 |
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+ | |ND_Pan1_091222 |
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+ | |128.6 |
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+ | |1.33 |
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+ | |New Si wafer, higher etch rate/ |
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+ | selectivity |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/8/8b/30D_pan1_091222_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/57/CS_pan1_091222_002.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |9/01/2022 |
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+ | |ND_Pan1_090122 |
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+ | |120.9 |
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+ | |1.05 |
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+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/0/06/30D_pan1_090122_001.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/1/1c/CS_pan1_090122_002.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |8/22/2022 |
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+ | |ND_Pan1_082222 |
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+ | |112.9 |
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+ | |1.08 |
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+ | |Etch Rate seems low |
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+ | and selectivity on the lower side |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/4/4e/45D_Pan1_082222_001.jpg <nowiki>[45D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/b/b9/CS_Pan1_082222_002.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |8/5/2022 |
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+ | |ND_Pan 1_080522 |
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+ | |115.1 |
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+ | |0.90 |
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+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/b/b2/30D_08052022_pan1_001.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/1/12/CS_08052022_pan1_001.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |7/27/2022 |
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+ | |ND_Pan1_072722 |
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+ | |134.6 |
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+ | |1.12 |
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+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/3/35/CS_004.jpg <nowiki>[CS]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/79/30D_001.jpg <nowiki>[30D]</nowiki>] |
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+ | |- |
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+ | |5/10/2022 |
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+ | |NP_ICP1_07 |
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+ | |136 |
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+ | |1.34 |
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+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/a/a4/ICP1_07_45D_008.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a7/ICP1_07_CS_006.jpg <nowiki>[2]</nowiki>] |
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|- |
|- |
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|4/26/2022 |
|4/26/2022 |
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|NP_ICP1_06 |
|NP_ICP1_06 |
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|139.4 |
|139.4 |
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+ | |1.36 |
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− | | |
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| |
| |
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|[https://wiki.nanotech.ucsb.edu/w/images/5/56/ICP1_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/49/ICP1_06_CS_002.jpg <nowiki>[2]</nowiki>] |
|[https://wiki.nanotech.ucsb.edu/w/images/5/56/ICP1_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/49/ICP1_06_CS_002.jpg <nowiki>[2]</nowiki>] |
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|NP_ICP1_05 |
|NP_ICP1_05 |
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|140 |
|140 |
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+ | |1.13 |
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− | | |
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| |
| |
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|[https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP1_05_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/72/ICP1_05_CS_002.jpg <nowiki>[2]</nowiki>] |
|[https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP1_05_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/72/ICP1_05_CS_002.jpg <nowiki>[2]</nowiki>] |
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Line 27: | Line 143: | ||
|NP_ICP1_04 |
|NP_ICP1_04 |
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|140.3 |
|140.3 |
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+ | |1.24 |
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− | | |
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| |
| |
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|[https://wiki.nanotech.ucsb.edu/w/images/9/98/ICP1_004_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/45/ICP1_004_CS_001.jpg <nowiki>[2]</nowiki>] |
|[https://wiki.nanotech.ucsb.edu/w/images/9/98/ICP1_004_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/45/ICP1_004_CS_001.jpg <nowiki>[2]</nowiki>] |
Latest revision as of 09:54, 12 January 2023
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Comments | SEM Images |
01/11/2023 | ND_Pan1_011123 | 120 | 1.28 | [30D][CS] | |
12/14/2022 | ND_Pan1_121422 | 118.6 | 1.30 | [30D][CS] | |
12/09/2022 | ND_Pan1_120922 | 100.6 | 1.01 | double AuPd coat maybe blur image | [30D][CS] |
11/18/2022 | ND_Pan1_111822 | 132.6 | 1.25 | [30D][CS] | |
11/07/2022 | ND_Pan1_110722 | 125.7 | 1.35 | [30D] [CS] | |
10/21/2022 | ND_Pan1_102122 | 114.3 | 1.15 | [30D] [CS] | |
10/10/2022 | ND_Pan1_101022 | 127.4 | 1.25 | [30D] [CS] | |
10/3/2022 | ND_Pan1_100322 | 132.9 | 1.19 | High etch rate and selectivity.
May be due to angled ridge. |
[30D] [CS] |
9/26/2022 | ND_Pan1n_092622 | 111.1 | 0.90 | This is the new wafer | [30D] [CS] |
9/26/2022 | ND_Pan1o_092622 | 114.3 | 1.01 | This is the old wafer | [45D] [CS] |
9/12/2022 | ND_Pan1_091222 | 128.6 | 1.33 | New Si wafer, higher etch rate/
selectivity |
[30D] [CS] |
9/01/2022 | ND_Pan1_090122 | 120.9 | 1.05 | [30D] [CS] | |
8/22/2022 | ND_Pan1_082222 | 112.9 | 1.08 | Etch Rate seems low
and selectivity on the lower side |
[45D] [CS] |
8/5/2022 | ND_Pan 1_080522 | 115.1 | 0.90 | [30D] [CS] | |
7/27/2022 | ND_Pan1_072722 | 134.6 | 1.12 | [CS] [30D] | |
5/10/2022 | NP_ICP1_07 | 136 | 1.34 | [1] [2] | |
4/26/2022 | NP_ICP1_06 | 139.4 | 1.36 | [1] [2] | |
4/20/2022 | NP_ICP1_05 | 140 | 1.13 | [1] [2] | |
4/13/2022 | NP_ICP1_04 | 140.3 | 1.24 | [1] [2] | |
3/29/2022 | NP_ICP1_03 | 136.9 | 1.19 | [1][2] | |
3/8/2022 | NP_ICP1_02 | 133.7 | 1.12 | [1] [2] | |
3/2/2022 | NP_ICP1_01 | 141.4 | 1.20 | [1] [2] | |
1/7/2021 | I12101 | 118 | 1.12 | [1] | |
3/3/2020 | I12004 | 110 | 1.05 | [2] | |
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data for 3/3 shows etch returned to "normal". | |||||
2/28/2020 | I12003 | 119 | 1.17 | 56.6 | [3] |
1/23/2020 | I12002 | 109 | 1.16 | [4] | |
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal". | |||||
1/13/2020 | I12001 | 78.0 | 1.06 | unusual - two regions | [5] |
5/29/2019 | I11903 | 105 | 1.41 | [6] | |
1/28/2019 | I11901 | 110 | 1.35 | see SEM → | [7] |
OLD Etch Test Data
Alternate SiO2 etch recipe with O2 included.
ICP#1: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
1/28/2019 | I11902 | 78.1 | 0.63 | [8] | |
5/29/2019 | I11904 | 71.1 | 0.58 | [9] |