Rapid Thermal Processor (SSI Solaris 150): Difference between revisions
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Millerski w (talk | contribs) (Changed the max temperature from 1250 to 1200 in the "About" section.) |
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== |
==About== |
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The Solaris 150 is a manual loading “Rapid Therm Process” (RPT) or “Rapid Thermal Anneal” (RTA) system for R&D and pre-production. The Solaris 150 can process up to 152.4mm substrates at a temperature range from RT- 1200 degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emmissivity differences. |
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The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying. |
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{{todo|list of specs, wafer sizes etc.}} |
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* [[SSI Solaris 150 - Operating Procedure|Solaris 150 Operating Procedure]] |
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*Wafer handling: Manual loading of wafer into the oven, single wafer processing. |
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*Wafer sizes: 2", 3", 4", 5" and 6" wafers and pieces. |
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*Ramp up rate: 10-200°C per second, user-controllable. |
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*Recommended steady state duration: 0-600 seconds per step. |
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*Ramp down rate: Temperature Dependent, max 150°C per second. |
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*Steady state temperature range: 300C - 1200°C |
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*Thermocouple temperature accuracy: + 2.5C |
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*Temperature repeatability: + 3C or better at 1150C wafer-to-wafer. |
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*Temperature uniformity: + 5C across a 6" (150 mm) wafer at 1150C. |
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*Gasses available: Nitrogen, Oxygen, Argon, Forming gas (90% Nitrogen / 10% Hydrogen). |
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*[https://wiki.nanofab.ucsb.edu/w/images/7/7a/RTA_SSI_Operating_Instructions.pdf Solaris 150 Operating Procedure] |
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*[https://wiki.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual] |
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Latest revision as of 15:36, 8 December 2023
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About
The Solaris 150 is a manual loading “Rapid Therm Process” (RPT) or “Rapid Thermal Anneal” (RTA) system for R&D and pre-production. The Solaris 150 can process up to 152.4mm substrates at a temperature range from RT- 1200 degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emmissivity differences.
The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.
Detailed Specificiations
- Wafer handling: Manual loading of wafer into the oven, single wafer processing.
- Wafer sizes: 2", 3", 4", 5" and 6" wafers and pieces.
- Ramp up rate: 10-200°C per second, user-controllable.
- Recommended steady state duration: 0-600 seconds per step.
- Ramp down rate: Temperature Dependent, max 150°C per second.
- Steady state temperature range: 300C - 1200°C
- Thermocouple temperature accuracy: + 2.5C
- Temperature repeatability: + 3C or better at 1150C wafer-to-wafer.
- Temperature uniformity: + 5C across a 6" (150 mm) wafer at 1150C.
- Gasses available: Nitrogen, Oxygen, Argon, Forming gas (90% Nitrogen / 10% Hydrogen).