Dry Etching Recipes: Difference between revisions

Revision as of 22:30, 7 February 2024

See linked page for process control data (dep rate/stress etc. over time), for a selection of often-used thin-film depositions.

Dry Etching Recipes
	RIE Etching			ICP Etching						Oxygen Plasma Systems				Other Dry Etchers
Material	RIE 2 (MRC)	RIE 3 (MRC)	RIE 5 (PlasmaTherm)	DSEIII (PlasmaTherm)	Fluorine ICP (PlasmaTherm)	ICP Etch 1 (Panasonic E646V)	ICP Etch 2 (Panasonic E626I)	Oxford ICP (PlasmaPro 100)	ICP-Etch (Unaxis VLR)	Ashers (Technics PEII)	Plasma Clean (YES EcoClean)	UV Ozone Reactor	Plasma Activation (EVG 810)	XeF2 Etch (Xetch)	Vapor HF Etch (uETCH)	CAIBE (Oxford)
Ag																A
Al			A			R1	R1									A
Au																R1
Cr			A			R1	A									A
Cu																A
Ge						A	A							A		A
Mo																A
Nb						A	A
Ni																R1
Os						A	A
Pt																R1
Ru						A	R1									A
Si				R1	R1			A						R1		A
Ta						A	A									A
Ti						R1	A									A
Al₂O₃						A	R									A
Al₂O_{3 (Sapphire)}						R1	A									A
AlGaAs			R1			R1		R	GaAs-AlGaAs Etch (Unaxis VLR)							A
AlGaN								R	R1							A
AlN									R1							A
BCB						A
CdZnTe	R1															A
GaAs			R1			R1	R1	R	GaAs-AlGaAs Etch (Unaxis VLR)							A
GaN			R1			R1	A	R	R1							A
GaSb						A	A	A	GaSb Etch Unaxis VLR)							A
HfO₂																A
InGaAlAs	InP-InGaAsP-InGaAlAs Etching (RIE 2)							A	InP-InGaAs-InAlAs Etch (Unaxis VLR)							A
InGaAsP	InP-InGaAsP-InGaAlAs Etching (RIE 2)							R	InP-InGaAs-InAlAs Etch (Unaxis VLR)							A
InP	InP-InGaAsP-InGaAlAs Etching (RIE 2)					A	A	R	InP-InGaAs-InAlAs Etch (Unaxis VLR)							R1
ITO	R1															A
LiNbO3																A
Photoresist & ARC		A	R		R	R	R			R	R					A
Ru						A	R
SiC						R1	A									A
SiN		SiN_x Etching (RIE 3)			R	R1	R1			A						A
SiO₂		SiO₂ Etching (RIE 3)			R1	R1	R1								R1	A
SiOxNy						A	A									A
SU8						A
Ta₂O₅						A	A									A
TiN																A
TiO₂																A
W-TiW						R1	A									A
ZnO₂																A
ZnS	R1															A
ZnSe	R1															A
ZrO₂																A
Material	RIE 2 (MRC)	RIE 3 (MRC)	RIE 5 (PlasmaTherm)	DSEIII (PlasmaTherm)	Fluorine ICP (PlasmaTherm)	ICP Etch 1 (Panasonic E626I)	ICP Etch 2 (Panasonic E640)	Oxford ICP (PlasmaPro 100)	ICP-Etch (Unaxis VLR)	Ashers (Technics PEII)	Plasma Clean (YES EcoClean)	UV Ozone Reactor	Plasma Activation (EVG 810)	XeF2 Etch (Xetch)	Vapor HF Etch (uETCH)	CAIBE (Oxford)

@@ Line 23: / Line 23: @@
 | bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
 | bgcolor="#daf1ff" |[[ICP Etching Recipes#PlasmaTherm.2FSLR Fluorine Etcher|Fluorine ICP <span style="font-size: 88%;">(PlasmaTherm)</span>]]
-| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_1_.28Panasonic_E626I.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic E626I)</span>]]
+| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_1_.28Panasonic_E626I.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic  E646V)</span>]]
-| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E640)</span>]]
+| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic  E626I)</span>]]
 | bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]]
 | bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br><span style="font-size: 88%;">(Unaxis VLR)</span>]]