Difference between revisions of "MLA Recipes"

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|60s
  
|60s
 
|Used MLA design
  
|Used MLA design
  ⚫
|-
  +
|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
  +
|3.5 krpm/30s
  +
|115°C/2m
  +
|~7 µm
  +
|405
  +
|440
  ⚫
|5
  +
|50°C/1m, ramp up, 115°C/90s
  +
|AZ300MIF
  +
|70s
  +
|UCSB design 1um pillars/5um trenches]
 
|-
  
|-
 
|[[:File:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
  
|[[:File:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
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! width="75" |Bake
  
! width="75" |Bake
 
! width="75" |Thickness
  
! width="75" |Thickness
  +
! width="75" |Laser
 
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
  
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
 
! width="100" |Focus Offset
  
! width="100" |Focus Offset
  +
! width="75" |Rehydrate
 
! width="75" |PEB
  
! width="75" |PEB
 
! width="75" |Flood
  
! width="75" |Flood
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|– krpm/30”
  
|– krpm/30”
 
|95°C/60”
  
|95°C/60”
  ⚫
|
 
|
  
|
 
|
  
|
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|SPR 220-7
  
|SPR 220-7
 
|–3.5krpm/30”
  
|–3.5krpm/30”
−
|105°C/120”
 +
|105°C/120” Cool 1min
  +
|~7um
⚫
|
  
−
|
 +
|375
  +
|624mJ to clear large mm area, 520mJ to clear ~5um lines
⚫
|
  
  +
|neg 20
⚫
|
  
  +
|>1hr
−
|60"
  
  +
|115C/90s
 
|AZ300MIF
  
|AZ300MIF
−
|70"
 +
|70s
−
| align="left" |
 +
|align="left"|
 
*TBD
  
*TBD
  +
|Rehydration after exposure is necessary, to prevent bubbles at PEB
 
|}
  
|}

Latest revision as of 10:56, 24 May 2024

Maskless Aligner (Heidelberg MLA150)

Photolithography Recipes for the Heidelberg MLA150. Description of litho params- different lasers available, greyscale etc.

Positive Resist (MLA150)

General notes: Hotplates used, filters, laser wavelengths, etc. “Soft Bake” is right after spin, “PEB” is post-exposure bake - right after exposure

Resist Spin Cond. Soft Bake Thickness Laser (nm) Exposure Dose (mJ/cm2) DeFocus Post-Exposure Bake Developer Developer Time Comments
AZ4110 4 krpm/30s 95°C/60s ~ 1.1 µm 405 240 5 none AZ400K:DI 1:4 50s Used MLA design (good for isolated lines 0.8-1um)
AZ4330 4 krpm/30s 95°C/60s ~ 3.3 µm 405 320 6 none AZ400K:DI 1:4 90s Used MLA design
AZ4620
SPR 220-3.0 2.5 krpm/30s 115°C/90” ~ 2.7 µm 405 325 - 4 115°C/90s AZ300MIF 60s Used MLA design
SPR 220-7.0 3.5 krpm/30s 115°C/2m ~7 µm 405 440 5 50°C/1m, ramp up, 115°C/90s AZ300MIF 70s UCSB design 1um pillars/5um trenches]
SPR 955-CM0.9 3 krpm/30s 95°C/90” ~ 0.9 µm 405 250 - 7 110°C/90s AZ300MIF 60s Used MLA design, [for 5um pillars/1um trench:150/5]
THMR-3600HP 1.5 krpm/45s250 rpm/s 100°C/60s 0.430µm 405 180–220 -4 100°C/60s AZ300MiF 20s line/space:

low dose for clear-field, high does for dark-field

Negative Resist (MLA150)

General notes: Hotplates used, filters, laser wavelengths, etc. “Soft Bake” is right after spin, “PEB” is post-exposure bake - right after exposure. “Flood exposure” is only for AZ5214 for image reversal, after PEB.

Resist Spin Cond. Soft Bake Thickness Laser (nm) Exposure Dose (mJ/cm2) DeFocus PEB Flood Developer Developer Time Comments
AZ5214 6 krpm/30s 95°C/60s ~ 1.0 µm 375 35 - 5 110°C/60s 60" AZ300MIF 60s Used UCSB design. Good for up to ~1.3um open line space.
AZnLOF2020 4 krpm/30s 110°C/60s ~ 2.1µm 375 340 - 3 110°C/60s none AZ300MIF 90s Used UCSB design. Good for 2um open line space.
SU-8 2075 ~70µm 375 Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.

Greyscale Lithography (MLA150)

Description...

Resist Spin Cond. Bake Thickness Laser Exposure Dose (mJ/cm2) Focus Offset Rehydrate PEB Flood Developer Developer Time Comments
AZ4620 – krpm/30” 95°C/60” 60" AZ300MIF 60"
  • TBD
SPR 220-7 –3.5krpm/30” 105°C/120” Cool 1min ~7um 375 624mJ to clear large mm area, 520mJ to clear ~5um lines neg 20 >1hr 115C/90s AZ300MIF 70s
  • TBD
 Rehydration after exposure is necessary, to prevent bubbles at PEB
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