E-Beam 1 (Sharon): Difference between revisions
Jump to navigation
Jump to search
| (5 intermediate revisions by the same user not shown) | |||
| Line 15: | Line 15: | ||
=About= |
=About= |
||
The Sharon is a cryo-pumped thin film evaporator with a |
The Sharon is a cryo-pumped thin film evaporator with a Telemark 8 pocket electron beam evaporation source. Fixturing in EBeam1 will accept any size sample up to 4-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° rotation of any size sample, up to 4-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces. |
||
| ⚫ | |||
A new fixture allowing up to four - 4" diameter wafers is now installed. |
|||
| ⚫ | |||
=Detailed Specifications= |
=Detailed Specifications= |
||
| Line 29: | Line 27: | ||
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control |
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control |
||
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor |
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor |
||
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV |
|||
*Pieces up to Four - 4" wafers in one run. |
*Pieces up to Four - 4" wafers in one run. |
||
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation. |
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation. |
||
| Line 35: | Line 32: | ||
=Documentation= |
=Documentation= |
||
*[https://wiki.nanofab.ucsb.edu/w/images/ |
*[https://wiki.nanofab.ucsb.edu/w/images/f/f0/EB-1_operation_instructions_6-6-24.pdf EBeam 1 Operating Procedure] |
||
**Operating Instructions |
**Operating Instructions |
||
**[ |
**[https://wiki.nanofab.ucsb.edu/w/images/e/e3/EB1_Rotation_Fixture_SOP_6-4-24.pdf Rotation Fixture SOP] |
||
=Recipes= |
=Recipes= |
||
Latest revision as of 22:08, 6 June 2024
| ||||||||||||||||||||||||||||||
About
The Sharon is a cryo-pumped thin film evaporator with a Telemark 8 pocket electron beam evaporation source. Fixturing in EBeam1 will accept any size sample up to 4-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° rotation of any size sample, up to 4-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.
EBeam1 is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metallization for fabrication of III-V compound semiconductor and silicon device fabrication.
Detailed Specifications
- Cryopump: CTI Cryotorr 8F with air-cooled compressor
- Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
- Mechanical Pump: Ebara EV-A10, 35 CFM
- Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
- Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
- Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
- Pieces up to Four - 4" wafers in one run.
- For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.
Documentation
- EBeam 1 Operating Procedure
- Operating Instructions
- Rotation Fixture SOP
Recipes
- See the E-Beam Recipe Page, for the materials tables and deposition parameters for various materials.