Difference between revisions of "Dry Etching Recipes"

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===<u>[[Process Group - Process Control Data#Etching .28Process Control Data.29|Process Control Data]]</u>===
{{Recipe Table Explanation}}
 
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<small>''See above [[Process Group - Process Control Data#Etching .28Process Control Data.29|linked page]] for [https://en.wikipedia.org/wiki/Statistical_process_control process control data] (dep rate/stress etc. over time), for a selection of often-used dry etches''</small>
   
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===Dry Etching Tools/Materials Table===
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''The Key/Legend for this table's <code>A...R5</code> values is at the [[Dry Etching Recipes#Process Ranking Table|bottom of the page]].''
 
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
 
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
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|-
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! colspan="17" width="725" height="45" |<div style="font-size: 150%;">Dry Etching Recipes</div>
 
|- bgcolor="#d0e7ff"
 
|- bgcolor="#d0e7ff"
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| bgcolor="#eaecf0" |<!-- INTENTIONALLY LEFT BLANK -->
! colspan="18" width="725" height="45" |<div style="font-size: 150%;">Dry Etching Recipes</div>
 
|- bgcolor="#d0e7ff"
 
|<!-- INTENTIONALLY LEFT BLANK -->
 
 
! colspan="3" |'''[[RIE Etching Recipes|RIE Etching]]'''
 
! colspan="3" |'''[[RIE Etching Recipes|RIE Etching]]'''
 
! colspan="6" |'''[[ICP Etching Recipes|ICP Etching]]'''
 
! colspan="6" |'''[[ICP Etching Recipes|ICP Etching]]'''
! colspan="5" bgcolor="#d0e7ff" align="center" |'''[[Oxygen Plasma System Recipes|Oxygen Plasma Systems]]'''
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! colspan="4" bgcolor="#d0e7ff" align="center" |'''[[Oxygen Plasma System Recipes|Oxygen Plasma Systems]]'''
 
! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[Other Dry Etching Recipes|Other Dry Etchers]]'''
 
! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[Other Dry Etching Recipes|Other Dry Etchers]]'''
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|- bgcolor="#d0e7ff"
|-
 
! width="65" bgcolor="#d0e7ff" align="center" |'''Material'''
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! bgcolor="#d0e7ff" align="center" |'''Material'''
| width="65" bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> (MRC)]]
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| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]
| width="65" bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_3_.28MRC.29|RIE 3<br> (MRC)]]
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| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_3_.28MRC.29|RIE 3<br> <span style="font-size: 88%;">(MRC)</span>]]
| width="100" bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br>(PlasmaTherm)]]
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| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| width="100" bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br>(PlasmaTherm)]]
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| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| width="100" bgcolor="#daf1ff" |[https://wiki.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#PlasmaTherm.2FSLR_Fluorine_Etcher SLR Fluorine ICP (PlasmaTherm)]
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| bgcolor="#daf1ff" |[[ICP Etching Recipes#PlasmaTherm.2FSLR Fluorine Etcher|Fluorine ICP <span style="font-size: 88%;">(PlasmaTherm)</span>]]
| width="120" bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_1_.28Panasonic_E626I.29|ICP Etch 1<br>(Panasonic 1)]]
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| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E646V.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic E646V)</span>]]
| width="120" bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29|ICP Etch 2<br>(Panasonic 2)]]
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| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E626I)</span>]]
|[[Oxford ICP Etcher (PlasmaPro 100 Cobra)|Oxford ICP (PlasmaPro 100)]]
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| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]]
| width="85" bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br>(Unaxis VLR)]]
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| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br><span style="font-size: 88%;">(Unaxis VLR)</span>]]
| width="85" bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br>(Technics PEII)]]
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| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]]
| width="95" bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Clean_.28Gasonics_2000.29|Plasma Clean<br>(Gasonics 2000)]]
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| bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]]
| width="95" bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean (YES EcoClean)]]
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| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]
| width="85" bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]
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| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br><span style="font-size: 88%;">(EVG 810)</span>]]
| width="85" bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br>(EVG 810)]]
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| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br><span style="font-size: 88%;">(Xetch)</span>]]
| width="85" bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br>(Xetch)]]
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| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br><span style="font-size: 88%;">(uETCH)</span>]]
| width="85" bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br>(uETCH)]]
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| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br><span style="font-size: 88%;">(Oxford)</span>]]
| width="85" bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br>(Oxford)]]
 
 
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! bgcolor="#d0e7ff" align="center" |Ag
 
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|{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)}}
 
|{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)}}
 
|{{rl|ICP Etching Recipes|Al Etch (Panasonic 2)}}
 
|{{rl|ICP Etching Recipes|Al Etch (Panasonic 2)}}
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|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}
 
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|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}
 
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|{{rl|ICP Etching Recipes|DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)}}
 
|{{rl|ICP Etching Recipes|DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)}}
|{{Rl|ICP Etching Recipes|Si Etching}}
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|[[ICP Etching Recipes#Si Etching .28Fluorine ICP Etcher.29|R3]]
 
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|[https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 R]
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|{{rl|ICP Etching Recipes|Sapphire Etch (Panasonic 1)}}
 
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|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}}
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|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R3]]
 
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|AlGaAs Etch (Unaxis VLR)}}
 
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|AlGaAs Etch (Unaxis VLR)}}
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|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R2]]
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|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}}
 
|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}}
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|{{rl|RIE Etching Recipes|CdZnTe Etch (RIE 2)}}
 
|{{rl|RIE Etching Recipes|CdZnTe Etch (RIE 2)}}
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|{{rl|ICP Etching Recipes|GaAs Etch (Panasonic 2)}}
 
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|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R3]]
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|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|GaAs Etch (Unaxis VLR)}}
 
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|GaAs Etch (Unaxis VLR)}}
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|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R2]]
 
|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}}
 
|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}}
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|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaSb Etch Unaxis VLR)}}
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! bgcolor="#d0e7ff" align="center" |InGaAlAs
 
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
 
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
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|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
 
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
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! bgcolor="#d0e7ff" align="center" |InGaAsP
 
! bgcolor="#d0e7ff" align="center" |InGaAsP
 
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
 
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
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|[[ICP Etching Recipes#InP Ridge Etch .28Oxford ICP Etcher.29|R3]]
|R
 
 
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
 
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
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! bgcolor="#d0e7ff" align="center" |InP
 
! bgcolor="#d0e7ff" align="center" |InP
 
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
 
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
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|[[ICP Etching Recipes#InP Ridge Etch .28Oxford ICP Etcher.29|R6]]
|R
 
 
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
 
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
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|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}
 
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! bgcolor="#d0e7ff" align="center" |ITO
 
! bgcolor="#d0e7ff" align="center" |ITO
 
|{{rl|RIE Etching Recipes|ITO Etch (RIE 2)}}
 
|{{rl|RIE Etching Recipes|ITO Etch (RIE 2)}}
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|A
  +
|-
  +
!LiNbO3
 
|
 
|
 
|
 
|
Line 542: Line 589:
 
|
 
|
 
|A
 
|A
|- bgcolor="#eeffff"
+
|- bgcolor="#ffffff"
 
!Photoresist
 
!Photoresist
 
& ARC
 
& ARC
Line 549: Line 596:
 
|[https://wiki.nanotech.ucsb.edu/wiki/RIE_Etching_Recipes#Photoresist_and_ARC_.28RIE_5.29 R]
 
|[https://wiki.nanotech.ucsb.edu/wiki/RIE_Etching_Recipes#Photoresist_and_ARC_.28RIE_5.29 R]
 
|
 
|
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_.26_ARC_.28Fluorine_ICP_Etcher.29 R]
+
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_.26_ARC_.28Fluorine_ICP_Etcher.29 R4]
 
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R]
 
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R]
 
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_etching_.28Panasonic_2.29 R]
 
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_etching_.28Panasonic_2.29 R]
 
|
 
|
 
|
 
|
  +
|[[Oxygen Plasma System Recipes#O2 Ashing|R]]
|A
 
  +
|[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|R]]
|A
 
|A
 
 
|
 
|
 
|
 
|
Line 563: Line 609:
 
|A
 
|A
 
|-
 
|-
  +
!Ru
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|A
  +
|[[ICP Etching Recipes#Ru .28Ruthenium.29 Etch .28Panasonic 2.29|R]]
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|- bgcolor="#eeffff"
 
! bgcolor="#d0e7ff" align="center" |SiC
 
! bgcolor="#d0e7ff" align="center" |SiC
 
|
 
|
Line 571: Line 635:
 
|{{rl|ICP Etching Recipes|SiC Etch (Panasonic 1)}}
 
|{{rl|ICP Etching Recipes|SiC Etch (Panasonic 1)}}
 
|A
 
|A
|
 
 
|
 
|
 
|
 
|
Line 581: Line 644:
 
|
 
|
 
|A
 
|A
  +
|- bgcolor="#ffffff"
|-
 
 
! bgcolor="#d0e7ff" align="center" |SiN
 
! bgcolor="#d0e7ff" align="center" |SiN
 
|
 
|
Line 587: Line 650:
 
|
 
|
 
|
 
|
  +
|[[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29|R4]]
|
 
 
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}}
 
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}}
 
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 2)}}
 
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 2)}}
Line 593: Line 656:
 
|
 
|
 
|A
 
|A
|
 
 
|
 
|
 
|
 
|
Line 606: Line 668:
 
|
 
|
 
|
 
|
|{{rl|ICP Etching Recipes|SiO2 Etching (Fluorine ICP Etcher)}}
+
|[[ICP Etching Recipes#SiO2 Etching .28Fluorine ICP Etcher.29|R6]]
 
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}}
 
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}}
 
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 2)}}
 
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 2)}}
|
 
 
|
 
|
 
|
 
|
Line 619: Line 680:
 
|{{rl|Other Dry Etching Recipes|Other Dry Etch (Vapor HF Etcher)}}
 
|{{rl|Other Dry Etching Recipes|Other Dry Etch (Vapor HF Etcher)}}
 
|A
 
|A
|- bgcolor="#eeffff"
+
|- bgcolor="#ffffff"
 
! bgcolor="#d0e7ff" align="center" |SiOxNy
 
! bgcolor="#d0e7ff" align="center" |SiOxNy
 
|
 
|
Line 628: Line 689:
 
|A
 
|A
 
|A
 
|A
|
 
 
|
 
|
 
|
 
|
Line 639: Line 699:
 
|A
 
|A
 
|-
 
|-
  +
!SU8
! bgcolor="#d0e7ff" align="center" |Ta<sub>2</sub>O<sub>5</sub>
 
 
|
 
|
 
|
 
|
Line 645: Line 705:
 
|
 
|
 
|
 
|
  +
|A
 
|
 
|
|[https://www.osapublishing.org/optica/abstract.cfm?uri=optica-4-5-532 A]
 
 
|
 
|
 
|
 
|
 
|
 
|
 
|
 
|
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|- bgcolor="#eeffff"
  +
! bgcolor="#d0e7ff" align="center" |Ta<sub>2</sub>O<sub>5</sub>
 
|
 
|
 
|
 
|
Line 657: Line 724:
 
|
 
|
 
|A
 
|A
  +
|[https://www.osapublishing.org/optica/abstract.cfm?uri=optica-4-5-532 A]
|-
 
! bgcolor="#d0e7ff" align="center" |TiN
 
 
|
 
|
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|
  +
|A
  +
|- bgcolor="#ffffff"
  +
! bgcolor="#d0e7ff" align="center" |TiN
 
|
 
|
 
|
 
|
Line 678: Line 754:
 
|- bgcolor="#eeffff"
 
|- bgcolor="#eeffff"
 
! bgcolor="#d0e7ff" align="center" |TiO<sub>2</sub>
 
! bgcolor="#d0e7ff" align="center" |TiO<sub>2</sub>
|
 
 
|
 
|
 
|
 
|
Line 695: Line 770:
 
|
 
|
 
|A
 
|A
|- bgcolor="#eeffff"
+
|- bgcolor="#ffffff"
 
! bgcolor="#d0e7ff" align="center" |W-TiW
 
! bgcolor="#d0e7ff" align="center" |W-TiW
 
|
 
|
Line 704: Line 779:
 
|{{rl|ICP Etching Recipes|W-TiW Etch (Panasonic 1)}}
 
|{{rl|ICP Etching Recipes|W-TiW Etch (Panasonic 1)}}
 
|A
 
|A
|
 
 
|
 
|
 
|
 
|
Line 716: Line 790:
 
|- bgcolor="#eeffff"
 
|- bgcolor="#eeffff"
 
! bgcolor="#d0e7ff" align="center" |ZnO<sub>2</sub>
 
! bgcolor="#d0e7ff" align="center" |ZnO<sub>2</sub>
|
 
 
|
 
|
 
|
 
|
Line 733: Line 806:
 
|
 
|
 
|A
 
|A
  +
|- bgcolor="#ffffff"
|-
 
 
! bgcolor="#d0e7ff" align="center" |ZnS
 
! bgcolor="#d0e7ff" align="center" |ZnS
 
|{{rl|RIE Etching Recipes|ZnS Etching (RIE 2)}}
 
|{{rl|RIE Etching Recipes|ZnS Etching (RIE 2)}}
|
 
 
|
 
|
 
|
 
|
Line 752: Line 824:
 
|
 
|
 
|A
 
|A
  +
|- bgcolor="#eeffff"
|-
 
 
! bgcolor="#d0e7ff" align="center" |ZnSe
 
! bgcolor="#d0e7ff" align="center" |ZnSe
 
|{{rl|RIE Etching Recipes|ZnS Etching (RIE 2)}}
 
|{{rl|RIE Etching Recipes|ZnS Etching (RIE 2)}}
|
 
 
|
 
|
 
|
 
|
Line 771: Line 842:
 
|
 
|
 
|A
 
|A
  +
|- bgcolor="#ffffff"
|-
 
 
! bgcolor="#d0e7ff" align="center" |ZrO<sub>2</sub>
 
! bgcolor="#d0e7ff" align="center" |ZrO<sub>2</sub>
|
 
 
|
 
|
 
|
 
|
Line 790: Line 860:
 
|
 
|
 
|A
 
|A
  +
|- bgcolor="#eeffff"
|-
 
 
! bgcolor="#d0e7ff" align="center" |'''Material'''
 
! bgcolor="#d0e7ff" align="center" |'''Material'''
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> (MRC)]]
+
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_3_.28MRC.29|RIE 3<br> (MRC)]]
+
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_3_.28MRC.29|RIE 3<br> <span style="font-size: 88%;">(MRC)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br>(PlasmaTherm)]]
+
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br>(PlasmaTherm)]]
+
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|SLR Fluorine ICP (PlasmaTherm)]]
+
| bgcolor="#daf1ff" |[[ICP Etching Recipes#PlasmaTherm.2FSLR Fluorine Etcher|Fluorine ICP <span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_1_.28Panasonic_E626I.29|ICP Etch 1<br>(Panasonic E626I)]]
+
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E646V.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic E626I)</span>]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29|ICP Etch 2<br>(Panasonic E640)]]
+
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E640)</span>]]
|[[Oxford ICP Etcher (PlasmaPro 100 Cobra)|Oxford ICP (PlasmaPro 100)]]
+
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br>(Unaxis VLR)]]
+
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br><span style="font-size: 88%;">(Unaxis VLR)</span>]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br>(Technics PEII)]]
+
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Clean_.28Gasonics_2000.29|Plasma Clean<br>(Gasonics 2000)]]
+
| bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]]
| width="95" bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean (YES EcoClean)]]
 
 
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]
 
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br>(EVG 810)]]
+
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br><span style="font-size: 88%;">(EVG 810)</span>]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br>(Xetch)]]
+
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br><span style="font-size: 88%;">(Xetch)</span>]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br>(uETCH)]]
+
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br><span style="font-size: 88%;">(uETCH)</span>]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br>(Oxford)]]
+
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br><span style="font-size: 88%;">(Oxford)</span>]]
 
|}
 
|}
   
  +
==='''Process Ranking Table'''===
  +
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:
  +
{| class="wikitable"
  +
!Process Level
  +
! colspan="11" |Description of Process Level Ranking
  +
|-
  +
|A
  +
| colspan="11" |Process '''A'''llowed and materials available but never done
  +
|-
  +
|R1
  +
| colspan="11" |Process has been run at least once
  +
|-
  +
|R2
  +
| colspan="11" |Process has been run and/or procedure is documented or/and data available
  +
|-
  +
|R3
  +
| colspan="11" |Process has been run, procedure is documented, and data is available
  +
|-
  +
|R4
  +
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available
  +
|-
  +
|R5
  +
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available
  +
|-
  +
|R6
  +
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
  +
|}
 
[[Category:Processing]]
 
[[Category:Processing]]

Revision as of 14:34, 26 July 2024

Process Control Data

See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches

Dry Etching Tools/Materials Table

The Key/Legend for this table's A...R5 values is at the bottom of the page.

Dry Etching Recipes
RIE Etching ICP Etching Oxygen Plasma Systems Other Dry Etchers
Material RIE 2
(MRC)
RIE 3
(MRC)
RIE 5
(PlasmaTherm)
DSEIII
(PlasmaTherm)
Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E646V)
ICP Etch 2
(Panasonic E626I)
Oxford ICP (PlasmaPro 100) ICP-Etch
(Unaxis VLR)
Ashers
(Technics PEII)
Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810)
XeF2 Etch
(Xetch)
Vapor HF Etch
(uETCH)
CAIBE
(Oxford)
Ag A
Al A R1 R1 A
Au R1
Cr A R1 A A
Cu A
Ge A A A A
Mo A
Nb A A
Ni R1
Os A A
Pt R1
Ru A R1 A
Si R1 R3 A R1 A
Ta A A A
Ti R1 A A
Al2O3 A R A
Al2O3 (Sapphire) R1 A A
AlGaAs R1 R1 R3 GaAs-AlGaAs Etch (Unaxis VLR) A
AlGaN R2 R1 A
AlN R1 A
BCB A
CdZnTe R1 A
GaAs R1 R1 R1 R3 GaAs-AlGaAs Etch (Unaxis VLR) A
GaN R1 R1 A R2 R1 A
GaSb A A A GaSb Etch Unaxis VLR) A
HfO2 A
InGaAlAs InP-InGaAsP-InGaAlAs Etching (RIE 2) A InP-InGaAs-InAlAs Etch (Unaxis VLR) A
InGaAsP InP-InGaAsP-InGaAlAs Etching (RIE 2) R3 InP-InGaAs-InAlAs Etch (Unaxis VLR) A
InP InP-InGaAsP-InGaAlAs Etching (RIE 2) A A R6 InP-InGaAs-InAlAs Etch (Unaxis VLR) R1
ITO R1 A
LiNbO3 A
Photoresist

& ARC

A R R4 R R R R A
Ru A R
SiC R1 A A
SiN SiNx Etching (RIE 3) R4 R1 R1 A A
SiO2 SiO2 Etching (RIE 3) R6 R1 R1 R1 A
SiOxNy A A A
SU8 A
Ta2O5 A A A
TiN A
TiO2 A
W-TiW R1 A A
ZnO2 A
ZnS R1 A
ZnSe R1 A
ZrO2 A
Material RIE 2
(MRC)
RIE 3
(MRC)
RIE 5
(PlasmaTherm)
DSEIII
(PlasmaTherm)
Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E626I)
ICP Etch 2
(Panasonic E640)
Oxford ICP (PlasmaPro 100) ICP-Etch
(Unaxis VLR)
Ashers
(Technics PEII)
Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810)
XeF2 Etch
(Xetch)
Vapor HF Etch
(uETCH)
CAIBE
(Oxford)

Process Ranking Table

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level Description of Process Level Ranking
A Process Allowed and materials available but never done
R1 Process has been run at least once
R2 Process has been run and/or procedure is documented or/and data available
R3 Process has been run, procedure is documented, and data is available
R4 Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available
R5 Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available
R6 Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available