Difference between revisions of "Dry Etching Recipes"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(FL-ICP SiN etch linked)
(Update OXFD recipe maturity levels)
(16 intermediate revisions by 3 users not shown)
Line 1: Line 1:
 
===<u>[[Process Group - Process Control Data#Etching .28Process Control Data.29|Process Control Data]]</u>===
  
===<u>[[Process Group - Process Control Data#Etching .28Process Control Data.29|Process Control Data]]</u>===
−
<small>''See [[Process Group - Process Control Data#Etching .28Process Control Data.29|linked page]] for [https://en.wikipedia.org/wiki/Statistical_process_control process control data] (dep rate/stress etc. over time), for a selection of often-used thin-film depositions.''</small>
 +
<small>''See above [[Process Group - Process Control Data#Etching .28Process Control Data.29|linked page]] for [https://en.wikipedia.org/wiki/Statistical_process_control process control data] (dep rate/stress etc. over time), for a selection of often-used dry etches''</small>
   
 
===Dry Etching Tools/Materials Table===
  
===Dry Etching Tools/Materials Table===
  +
''The Key/Legend for this table's <code>A...R5</code> values is at the [[Dry Etching Recipes#Process Ranking Table|bottom of the page]].''
−  
−
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small>
  
−
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small>
  
−  
 
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
  
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
 
|-
 
|-
Line 23: Line 20:
 
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
  
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
 
| bgcolor="#daf1ff" |[[ICP Etching Recipes#PlasmaTherm.2FSLR Fluorine Etcher|Fluorine ICP <span style="font-size: 88%;">(PlasmaTherm)</span>]]
  
| bgcolor="#daf1ff" |[[ICP Etching Recipes#PlasmaTherm.2FSLR Fluorine Etcher|Fluorine ICP <span style="font-size: 88%;">(PlasmaTherm)</span>]]
−
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_1_.28Panasonic_E626I.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic E626I)</span>]]
 +
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E646V.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic E646V)</span>]]
−
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E640)</span>]]
 +
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E626I)</span>]]
 
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]]
  
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]]
 
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br><span style="font-size: 88%;">(Unaxis VLR)</span>]]
  
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br><span style="font-size: 88%;">(Unaxis VLR)</span>]]
Line 256: Line 253:
 
|
  
|
 
|{{rl|ICP Etching Recipes|DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)}}
  
|{{rl|ICP Etching Recipes|DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)}}
−
|{{Rl|ICP Etching Recipes|Si_Etching_.28Fluorine_ICP_Etcher.29}}
 +
|[[ICP Etching Recipes#Si Etching .28Fluorine ICP Etcher.29|R3]]
 
|
  
|
 
|
  
|
Line 349: Line 346:
 
|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}}
  
|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}}
 
|
  
|
−
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R]]
 +
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R3]]
 
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|AlGaAs Etch (Unaxis VLR)}}
  
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|AlGaAs Etch (Unaxis VLR)}}
 
|
  
|
Line 367: Line 364:
 
|
  
|
 
|
  
|
−
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R]]
 +
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R2]]
 
|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}}
  
|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}}
 
|
  
|
Line 439: Line 436:
 
|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}}
  
|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}}
 
|{{rl|ICP Etching Recipes|GaAs Etch (Panasonic 2)}}
  
|{{rl|ICP Etching Recipes|GaAs Etch (Panasonic 2)}}
−
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R]]
 +
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R3]]
 
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|GaAs Etch (Unaxis VLR)}}
  
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|GaAs Etch (Unaxis VLR)}}
 
|
  
|
Line 457: Line 454:
 
|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}}
  
|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}}
 
|A
  
|A
−
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R]]
 +
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R2]]
 
|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}}
  
|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}}
 
|
  
|
Line 529: Line 526:
 
|
  
|
 
|
  
|
−
|[[ICP Etching Recipes#InP Ridge Etch .28Oxford ICP Etcher.29|R]]
 +
|[[ICP Etching Recipes#InP Ridge Etch .28Oxford ICP Etcher.29|R3]]
 
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
  
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
 
|
  
|
Line 547: Line 544:
 
|A
  
|A
 
|A
  
|A
−
|[[ICP Etching Recipes#InP Ridge Etch .28Oxford ICP Etcher.29|R]]
 +
|[[ICP Etching Recipes#InP Ridge Etch .28Oxford ICP Etcher.29|R6]]
 
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
  
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
 
|
  
|
Line 599: Line 596:
 
|[https://wiki.nanotech.ucsb.edu/wiki/RIE_Etching_Recipes#Photoresist_and_ARC_.28RIE_5.29 R]
  
|[https://wiki.nanotech.ucsb.edu/wiki/RIE_Etching_Recipes#Photoresist_and_ARC_.28RIE_5.29 R]
 
|
  
|
−
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_.26_ARC_.28Fluorine_ICP_Etcher.29 R]
 +
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_.26_ARC_.28Fluorine_ICP_Etcher.29 R4]
 
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R]
  
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R]
 
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_etching_.28Panasonic_2.29 R]
  
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_etching_.28Panasonic_2.29 R]
Line 653: Line 650:
 
|
  
|
 
|
  
|
−
|[[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29|R]]
 +
|[[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29|R4]]
 
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}}
  
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}}
 
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 2)}}
  
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 2)}}
Line 671: Line 668:
 
|
  
|
 
|
  
|
−
|{{rl|ICP Etching Recipes|SiO2 Etching (Fluorine ICP Etcher)}}
 +
|[[ICP Etching Recipes#SiO2 Etching .28Fluorine ICP Etcher.29|R6]]
 
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}}
  
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}}
 
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 2)}}
  
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 2)}}
Line 870: Line 867:
 
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
  
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
 
| bgcolor="#daf1ff" |[[ICP Etching Recipes#PlasmaTherm.2FSLR Fluorine Etcher|Fluorine ICP <span style="font-size: 88%;">(PlasmaTherm)</span>]]
  
| bgcolor="#daf1ff" |[[ICP Etching Recipes#PlasmaTherm.2FSLR Fluorine Etcher|Fluorine ICP <span style="font-size: 88%;">(PlasmaTherm)</span>]]
−
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_1_.28Panasonic_E626I.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic E626I)</span>]]
 +
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E646V.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic E626I)</span>]]
−
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E640)</span>]]
 +
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E640)</span>]]
 
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]]
  
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]]
 
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br><span style="font-size: 88%;">(Unaxis VLR)</span>]]
  
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br><span style="font-size: 88%;">(Unaxis VLR)</span>]]
Line 883: Line 880:
 
|}
  
|}
   
  +
==='''Process Ranking Table'''===
  +
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:
  +
{| class="wikitable"
  +
!Process Level
  +
! colspan="11" |Description of Process Level Ranking
  +
|-
  +
|A
  +
| colspan="11" |Process '''A'''llowed and materials available but never done
  +
|-
  +
|R1
  +
| colspan="11" |Process has been run at least once
  +
|-
  +
|R2
  +
| colspan="11" |Process has been run and/or procedure is documented or/and data available
  +
|-
  +
|R3
  +
| colspan="11" |Process has been run, procedure is documented, and data is available
  +
|-
  +
|R4
  +
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available
  +
|-
  +
|R5
  +
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available
  +
|-
  +
|R6
  +
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
  +
|}
 
[[Category:Processing]]
  
[[Category:Processing]]

Revision as of 14:34, 26 July 2024

Process Control Data

See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches

Dry Etching Tools/Materials Table

The Key/Legend for this table's A...R5 values is at the bottom of the page.

Dry Etching Recipes
RIE Etching ICP Etching Oxygen Plasma Systems Other Dry Etchers
Material RIE 2
(MRC) 		RIE 3
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E646V) 		ICP Etch 2
(Panasonic E626I) 		Oxford ICP (PlasmaPro 100) ICP-Etch
(Unaxis VLR) 		Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)
Ag A
Al A R1 R1 A
Au R1
Cr A R1 A A
Cu A
Ge A A A A
Mo A
Nb A A
Ni R1
Os A A
Pt R1
Ru A R1 A
Si R1 R3 A R1 A
Ta A A A
Ti R1 A A
Al2O3 A R A
Al2O3 (Sapphire) R1 A A
AlGaAs R1 R1 R3 GaAs-AlGaAs Etch (Unaxis VLR) A
AlGaN R2 R1 A
AlN R1 A
BCB A
CdZnTe R1 A
GaAs R1 R1 R1 R3 GaAs-AlGaAs Etch (Unaxis VLR) A
GaN R1 R1 A R2 R1 A
GaSb A A A GaSb Etch Unaxis VLR) A
HfO2 A
InGaAlAs InP-InGaAsP-InGaAlAs Etching (RIE 2) A InP-InGaAs-InAlAs Etch (Unaxis VLR) A
InGaAsP InP-InGaAsP-InGaAlAs Etching (RIE 2) R3 InP-InGaAs-InAlAs Etch (Unaxis VLR) A
InP InP-InGaAsP-InGaAlAs Etching (RIE 2) A A R6 InP-InGaAs-InAlAs Etch (Unaxis VLR) R1
ITO R1 A
LiNbO3 A
Photoresist

& ARC

A R R4 R R R R A
Ru A R
SiC R1 A A
SiN SiNx Etching (RIE 3) R4 R1 R1 A A
SiO2 SiO2 Etching (RIE 3) R6 R1 R1 R1 A
SiOxNy A A A
SU8 A
Ta2O5 A A A
TiN A
TiO2 A
W-TiW R1 A A
ZnO2 A
ZnS R1 A
ZnSe R1 A
ZrO2 A
Material RIE 2
(MRC) 		RIE 3
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E626I) 		ICP Etch 2
(Panasonic E640) 		Oxford ICP (PlasmaPro 100) ICP-Etch
(Unaxis VLR) 		Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)

Process Ranking Table

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level Description of Process Level Ranking
A Process Allowed and materials available but never done
R1 Process has been run at least once
R2 Process has been run and/or procedure is documented or/and data available
R3 Process has been run, procedure is documented, and data is available
R4 Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available
R5 Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available
R6 Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Dry_Etching_Recipes&oldid=162129"