SEM Sample Coater (Hummer): Difference between revisions
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(added more info and placeholder for SOP and link to techniqures to reduce chargign) |
(→Operating Procedures: fixed bullet points, listed approx film thickness) |
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{{tool2|{{PAGENAME}} |
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|picture=SEMSample.jpg |
|picture=SEMSample.jpg |
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|type = Inspection, Test and Characterization |
|type = Inspection, Test and Characterization |
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|super= |
|super= Michael Barreraz |
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|super2= Tony Bosch |
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|location=Bay 1 |
|location=Bay 1 |
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|description = |
|description = |
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}} |
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=About= |
=About= |
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This system is for coating |
This system is for coating thin (1-10nm) AuPd layers onto samples that will reduce charging during FESEM inspection. |
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===When to use=== |
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If you tried SEM'ing a sample, and the sample appears to drift/move during imaging/capture, or astigmatism is constantly changing, then your sample may be charging up and deflecting the electron beams. This is common for imaging insulators such as substrates made of glass (SiO2), or substrates coated in glass (SiO2, SiN) or thick photoresist (≥1µm). Thin layers (<<1µm) on top of conductive substrates (eg. 200nm SiO2 on Silicon substrate) can often allow electron beams and fields to penetrate to the conductor, possibly not requiring AuPd coating. |
If you tried SEM'ing a sample, and the sample appears to drift/move during imaging/capture, or astigmatism is constantly changing, then your sample may be charging up and deflecting the electron beams. This is common for imaging insulators such as substrates made of glass (SiO2), or substrates coated in glass (SiO2, SiN) or thick photoresist (≥1µm). Thin layers (<<1µm) on top of conductive substrates (eg. 200nm SiO2 on Silicon substrate) can often allow electron beams and fields to penetrate to the conductor, possibly not requiring AuPd coating. |
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== |
==Operating Procedures== |
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{{Todo|Upload SOP. Printouts available at tool.}} |
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* [https://wiki.nanotech.ucsb.edu/w/images/5/5d/SEM_sample_coater_%28hummer%29_instructions.pdf SEM Sample Coater (Hummer) Instructions] |
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Latest revision as of 00:17, 2 August 2024
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About
This system is for coating thin (1-10nm) AuPd layers onto samples that will reduce charging during FESEM inspection.
When to use
If you tried SEM'ing a sample, and the sample appears to drift/move during imaging/capture, or astigmatism is constantly changing, then your sample may be charging up and deflecting the electron beams. This is common for imaging insulators such as substrates made of glass (SiO2), or substrates coated in glass (SiO2, SiN) or thick photoresist (≥1µm). Thin layers (<<1µm) on top of conductive substrates (eg. 200nm SiO2 on Silicon substrate) can often allow electron beams and fields to penetrate to the conductor, possibly not requiring AuPd coating.
Operating Procedures