RIE Etching Recipes: Difference between revisions

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{{recipes|Dry Etching}}
{{recipes|Dry Etching}}
=[[RIE 2 (MRC)]] =
=[[RIE 2 (MRC)]]=
==CdZnTe Etching (RIE 2)==
==CdZnTe Etching (RIE 2)==

*[[media:11-CZT etching-1.pdf|CdZnTe Etch Recipes - CH<sub>4</sub>-H<sub>2</sub>-Ar]]
*[//wiki.nanotech.ucsb.edu/w/images/f/f5/11-CZT_etching-1.pdf CdZnTe Etch Recipes - CH<sub>4</sub>-H<sub>2</sub>-Ar]


==ZnS Etching (RIE 2)==
==ZnS Etching (RIE 2)==

*[[media:ZnS Plasma Etch-1.pdf|ZnS Etch Recipe - CH<sub>4</sub>-H<sub>2</sub>-Ar]]
*[//wiki.nanotech.ucsb.edu/w/images/b/b4/ZnS_Plasma_Etch-1.pdf ZnS Etch Recipe - CH<sub>4</sub>-H<sub>2</sub>-Ar]


==ITO Etching (RIE 2)==
==ITO Etching (RIE 2)==

*[[media:RIE2-ITO-Etch-MHA-Plasma-RevA.pdf|ITO Etch Recipes - CH<sub>4</sub>-H<sub>2</sub>-Ar]]
*[//wiki.nanotech.ucsb.edu/w/images/f/f4/RIE2-ITO-Etch-MHA-Plasma-RevA.pdf ITO Etch Recipes - CH<sub>4</sub>-H<sub>2</sub>-Ar]


==InP-InGaAsP-InGaAlAs Etching (RIE 2)==
==InP-InGaAsP-InGaAlAs Etching (RIE 2)==
⚫
*[[media:RIE2-InGaAs-InP-InAlAs-Etch-Plasma-RIE-RevA.pdf|InP-InGaAsP-InAlGaAs Etch Recipes - CH<sub>4</sub>-H<sub>2</sub>-Ar]]


⚫
*[//wiki.nanotech.ucsb.edu/w/images/6/6f/RIE2-InGaAs-InP-InAlAs-Etch-Plasma-RIE-RevA.pdf InP-InGaAsP-InAlGaAs Etch Recipes - CH<sub>4</sub>-H<sub>2</sub>-Ar]
=[[RIE 3 (MRC)]] =
==SiO<sub>2</sub> Etching (RIE 3)==
*[[media:SiO2-Etch-Recipe-using-RIE-3-a.pdf|SiO<sub>2</sub> Etch Recipe with a very low surface damage - CHF<sub>3]]
==SiN<sub>x</sub> Etching (RIE 3)==
*[[media:51-SiNx-Etch-Recipe-using-RIE3.pdf|SiN<sub>x</sub> Etch Recipe with a very low surface damage - CHF<sub>3]]


=[[RIE 5 (PlasmaTherm)]] =
=[[RIE 5 (PlasmaTherm)]]=
==AlGaAs\GaAs Etching (RIE 5)==
==AlGaAs\GaAs Etching (RIE 5)==

*[[media:13-GaAs-AlGaAs Etching-RIE-5.pdf|GaAs\AlGaAs Etch Recipes - BCl<sub>3</sub>-SiCl<sub>4</sub>]]
*[//wiki.nanotech.ucsb.edu/w/images/b/b5/13-GaAs-AlGaAs_Etching-RIE-5.pdf GaAs\AlGaAs Etch Recipes - BCl<sub>3</sub>-SiCl<sub>4</sub>]


==GaN Etching (RIE 5)==
==GaN Etching (RIE 5)==
⚫
*[[media:08-Plasma Etching of GaN-RIE5.pdf|GaN Etch Recipes - Cl<sub>2</sub>-BCl<sub>3</sub>-Ar]]


⚫
*[//wiki.nanotech.ucsb.edu/w/images/c/cb/08-Plasma_Etching_of_GaN-RIE5.pdf GaN Etch Recipes - Cl<sub>2</sub>-BCl<sub>3</sub>-Ar]
⚫
== Photoresist and ARC ==

⚫
==Photoresist and ARC (RIE 5)==

⚫
===DUV42P (AR2) etching===


⚫
*O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec
⚫
=== DUV42P (AR2) etching: ===
*No need to pump/purge, can etch right away.
⚫
* O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec
* No need to pump/purge, can etch right away.
*No helium cooling, Run in manual mode.
* No helium cooling, Run in manual mode.

Latest revision as of 22:37, 6 August 2024

Back to Dry Etching Recipes.

RIE 2 (MRC)

CdZnTe Etching (RIE 2)

ZnS Etching (RIE 2)

ITO Etching (RIE 2)

InP-InGaAsP-InGaAlAs Etching (RIE 2)

RIE 5 (PlasmaTherm)

AlGaAs\GaAs Etching (RIE 5)

GaN Etching (RIE 5)

Photoresist and ARC (RIE 5)

DUV42P (AR2) etching

  • O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec
  • No need to pump/purge, can etch right away.
  • No helium cooling, Run in manual mode.
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