RIE Etching Recipes: Difference between revisions

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{{recipes|Dry Etching}}
{{recipes|Dry Etching}}
=[[RIE 1 (Custom)]] =
=[[RIE 2 (MRC)]]=
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=[[RIE 2 (MRC)]] =
==CdZnTe Etching (RIE 2)==
==CdZnTe Etching (RIE 2)==
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*[[media:11-CZT_etching-1.pdf|CdZnTe Etch Recipes - CH<sub>4</sub>-H<sub>2</sub>-Ar]]


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*[//wiki.nanotech.ucsb.edu/w/images/f/f5/11-CZT_etching-1.pdf CdZnTe Etch Recipes - CH<sub>4</sub>-H<sub>2</sub>-Ar]
=[[RIE 3 (MRC)]] =

=[[RIE 5 (PlasmaTherm)]] =
==AlGaAs Etching (RIE 5)==
==ZnS Etching (RIE 2)==

⚫
*[[media:13-GaAs-AlGaAs_Etching-RIE-5.pdf|AlGaAs Etch Recipes - BCl<sub>3</sub>-SiCl<sub>4</sub>]]
*[//wiki.nanotech.ucsb.edu/w/images/b/b4/ZnS_Plasma_Etch-1.pdf ZnS Etch Recipe - CH<sub>4</sub>-H<sub>2</sub>-Ar]

==ITO Etching (RIE 2)==

*[//wiki.nanotech.ucsb.edu/w/images/f/f4/RIE2-ITO-Etch-MHA-Plasma-RevA.pdf ITO Etch Recipes - CH<sub>4</sub>-H<sub>2</sub>-Ar]

==InP-InGaAsP-InGaAlAs Etching (RIE 2)==

*[//wiki.nanotech.ucsb.edu/w/images/6/6f/RIE2-InGaAs-InP-InAlAs-Etch-Plasma-RIE-RevA.pdf InP-InGaAsP-InAlGaAs Etch Recipes - CH<sub>4</sub>-H<sub>2</sub>-Ar]

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=[[RIE 5 (PlasmaTherm)]]=
==AlGaAs\GaAs Etching (RIE 5)==

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*[//wiki.nanotech.ucsb.edu/w/images/b/b5/13-GaAs-AlGaAs_Etching-RIE-5.pdf GaAs\AlGaAs Etch Recipes - BCl<sub>3</sub>-SiCl<sub>4</sub>]


==GaN Etching (RIE 5)==
==GaN Etching (RIE 5)==
⚫
*[[media:08-Plasma_Etching_of_GaN-RIE5.pdf|GaN Etch Recipes - Cl<sub>2</sub>-BCl<sub>3</sub>-Ar]]


⚫
*[//wiki.nanotech.ucsb.edu/w/images/c/cb/08-Plasma_Etching_of_GaN-RIE5.pdf GaN Etch Recipes - Cl<sub>2</sub>-BCl<sub>3</sub>-Ar]
=[[Si Deep RIE (PlasmaTherm/Bosch Etch)]]=

==Photoresist and ARC (RIE 5)==

===DUV42P (AR2) etching===

*O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec
*No need to pump/purge, can etch right away.
*No helium cooling, Run in manual mode.

Latest revision as of 22:37, 6 August 2024

Back to Dry Etching Recipes.

RIE 2 (MRC)

CdZnTe Etching (RIE 2)

ZnS Etching (RIE 2)

ITO Etching (RIE 2)

InP-InGaAsP-InGaAlAs Etching (RIE 2)

RIE 5 (PlasmaTherm)

AlGaAs\GaAs Etching (RIE 5)

GaN Etching (RIE 5)

Photoresist and ARC (RIE 5)

DUV42P (AR2) etching

  • O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec
  • No need to pump/purge, can etch right away.
  • No helium cooling, Run in manual mode.
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