E-Beam 3 (Temescal): Difference between revisions
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{{tool2|{{PAGENAME}} |
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|picture=e-beam3.jpg |
|picture=e-beam3.jpg |
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|type = Vacuum Deposition |
|type = Vacuum Deposition |
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|super= |
|super= Aidan Hopkins |
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|super2= Mike Barreraz |
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|phone=(805)839-3918x216 |
|phone=(805)839-3918x216 |
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|location=Bay 3 |
|location=Bay 3 |
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|materials = |
|materials = |
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|toolid=9 |
|toolid=9 |
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}} |
}} |
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[[File:EBeam3 Controls.jpeg|thumb|EBeam#3 controls]] |
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| ⚫ | This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling |
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| ⚫ | This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron. |
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*Temescal Super Sweep e-beam sweep control |
*Temescal Super Sweep e-beam sweep control |
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*Inficon IC/5 programmable crystal thickness monitoring system |
*Inficon IC/5 programmable crystal thickness monitoring system |
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*Sample size: 1 wafer up to 4” diameter |
*Sample size: 1 wafer up to 4” diameter |
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*Metals: |
*Metals: |
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**Front Gun: Ti, Pt, Ni, Au |
**Front Gun: Ti, Pt, Ni, Au |
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=Documentation= |
=Documentation= |
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E-‐BEAM #3 OPERATING INSTRUCTIONS |
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1. Push VENT TO LOAD/ UNLOAD button on the load lock controller. If the load lock does not vent after 1 min. press the STOP button and then the RESET button on the IC/5 deposition controller. |
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2. Slide sample holder out of load lock. Clip your sample on the sample holder and slide back into the load lock. Push the PUMP TO DEPOSIT button on the load lock controller. The controller will pump and then lower your sample into the process chamber. |
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3. Press I/G [ion gauge] button on the vacuum gauge controller. Wait until the pressure is at 3.00e-‐10-‐6mt. |
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4. Program the IC/5 deposition controller for the correct thickness and rate of the desired material. Press F6 PROGRAM, then F2 PROCESS DIRECTORY. Use the arrow keys to enter your final thickness and rate, press E too enter. Press F6 PROCESS DIRECTORY, next press F6 PROGRAM, next press F6 OPERATE and then F1 ZERO THICKNESS. The IC/5 should show READY and the chosen program on the screen. |
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5. Rotate the hearth to your chosen source with the Turret Source Selector thumb wheel. When it is in the correct position, the indicator number will light. |
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6. Verify that the Shutter Controller is in the AUTO position. |
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7. Energize the gun filament by switching the main breaker switch on the CV-‐ |
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6SXL power supply. Turn the key switch to ON. Press the HV CONTROL white ON button. If the yellow fault light is “ on “press the green OFF button then the white ON button. [Should show 9.98 or 10.0 KV]. Press the GUN CONTROL white ON button [Should show 00.0 at idle]. |
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8. Press START button on the IC/5. As the power ramps up use the shuttered port on the front of the tool for Gun #1 or the camera for Gun #2 to verify that the beam is hitting the source. Use the beam sweep controller to focus the beam if needed. Once the shutter opens [The shutter light will come on] you can see the Gun#1 source thru the front viewport and the Gun #2 source with the camera. If you need to adjust the beam during the deposition do it slowly. If “pits” or “holes” are melted into the source, slowly move the beam around the edges of the hole, and let the melt flow back in and fill it. |
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9. The shutter will close and the gun will shut down automatically when your final thickness is reached. |
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10. Press the GUN CONTROL OFF button. Press the HV CONTROL OFF button. Turn the HV key OFF. Switch the main breaker on the CV-‐6SXL power supply OFF. |
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11. Push VENT TO LOAD/UNLOAD button on the load lock controller. The sample holder will return to the load lock and vent the load lock. Remove your sample. |
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12. Push PUMP TO STANDBY on the load lock controller. |
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13. Fill out the tool log. |
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.pdf|Operating Procedures]].pdf|Operating Procedures]] |
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*{{Blank}} |
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[https://wiki.nanofab.ucsb.edu/w/images/b/b6/EB-3_operation_instructions_7-8-24.pdf EB-3_operation_instructions_5-22-24.pdf] |
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For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]]. |
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]]. |
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Latest revision as of 22:19, 12 September 2024
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About
This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.
Detailed Specifications
- Temescal CV-6S 10kV power supply
- 2-Temescal 4-pocket series 260 e-beam sources
- Cryo-pumped system with ~ 5e-7 ultimate base pressure
- Load-lock for quick turn-around
- Automatic vacuum sequencing
- Temescal Super Sweep e-beam sweep control
- Inficon IC/5 programmable crystal thickness monitoring system
- Sample size: 1 wafer up to 4” diameter
- Metals:
- Front Gun: Ti, Pt, Ni, Au
- Rear Gun: Pd, Al, Ag, Ge
Documentation
EB-3_operation_instructions_5-22-24.pdf
Materials Table
For the materials tables, please visit the E-Beam Recipe Page.