Dry Etching Recipes: Difference between revisions
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===<u>[[Process Group - Process Control Data#Etching .28Process Control Data.29|Process Control Data]]</u>=== |
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{{Recipe Table Explanation}} |
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<small>''See above [[Process Group - Process Control Data#Etching .28Process Control Data.29|linked page]] for [https://en.wikipedia.org/wiki/Statistical_process_control process control data] (dep rate/stress etc. over time), for a selection of often-used dry etches''</small> |
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===Dry Etching Tools/Materials Table=== |
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''The Key/Legend for this table's <code>A...R6</code> values is at the [[Dry Etching Recipes#Process Ranking Table|bottom of the page]].'' |
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{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1" |
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1" |
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|- |
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! colspan="15" width="725" height="45" |<div style="font-size: 150%;">Dry Etching Recipes</div> |
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| bgcolor="#eaecf0" |<!-- INTENTIONALLY LEFT BLANK --> |
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! colspan="17" width="725" height="45" |<div style="font-size: 150%;">Dry Etching Recipes</div> |
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! colspan="2" |'''[[RIE Etching Recipes|RIE Etching]]''' |
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|<!-- INTENTIONALLY LEFT BLANK --> |
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! colspan="3" |'''[[RIE Etching Recipes|RIE Etching]]''' |
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! colspan="5" |'''[[ICP Etching Recipes|ICP Etching]]''' |
! colspan="5" |'''[[ICP Etching Recipes|ICP Etching]]''' |
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! colspan=" |
! colspan="4" bgcolor="#d0e7ff" align="center" |'''[[Oxygen Plasma System Recipes|Oxygen Plasma Systems]]''' |
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! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[Other Dry Etching Recipes|Other Dry Etchers]]''' |
! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[Other Dry Etching Recipes|Other Dry Etchers]]''' |
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! bgcolor="#d0e7ff" align="center" |'''Material''' |
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| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]] |
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| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]] |
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| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]] |
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| bgcolor="#daf1ff" |[[ICP Etching Recipes#PlasmaTherm.2FSLR Fluorine Etcher|Fluorine ICP <span style="font-size: 88%;">(PlasmaTherm)</span>]] |
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| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E646V.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic E646V)</span>]] |
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| width="100" bgcolor="#daf1ff" |[https://wiki.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#PlasmaTherm.2FSLR_Fluorine_Etcher SLR Fluorine ICP (PlasmaTherm)] |
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| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E626I)</span>]] |
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| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]] |
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| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]] |
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| bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]] |
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| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]] |
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| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br><span style="font-size: 88%;">(EVG 810)</span>]] |
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| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br><span style="font-size: 88%;">(Xetch)</span>]] |
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| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br><span style="font-size: 88%;">(uETCH)</span>]] |
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| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br><span style="font-size: 88%;">(Oxford)</span>]] |
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| width="85" bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br>(uETCH)]] |
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| width="85" bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br>(Oxford)]] |
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|[[ICP Etching Recipes#Al Etch .28Panasonic 2.29|R2]] |
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|[https://wiki.nanotech.ucsb.edu/wiki/index.php/Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29 R] |
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|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}} |
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|[[ICP Etching Recipes#Ru .28Ruthenium.29 Etch .28Panasonic 2.29|R3]] |
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! bgcolor="#d0e7ff" align="center" |Si |
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|[[ICP Etching Recipes#DSEIII .28PlasmaTherm.2FDeep Silicon Etcher.29|R6]] |
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|[[ICP Etching Recipes#Si Etching .28Fluorine ICP Etcher.29|R6]] |
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|{{rl|ICP Etching Recipes|DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)}} |
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|{{Rl|ICP Etching Recipes|Si Etching}} |
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|{{rl|ICP Etching Recipes|W-TiW Etch (Panasonic 1)}} |
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!TiW |
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! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub> |
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|[https://wiki.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 R] |
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! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub> |
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|[[ICP Etching Recipes#Al2O3 Etching .28Panasonic 2.29|R3]] |
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! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3 (Sapphire)</sub> |
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3 (Sapphire)</sub> |
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|{{rl|ICP Etching Recipes|Sapphire Etch (Panasonic 1)}} |
|{{rl|ICP Etching Recipes|Sapphire Etch (Panasonic 1)}} |
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! bgcolor="#d0e7ff" align="center" |AlGaAs |
! bgcolor="#d0e7ff" align="center" |AlGaAs |
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|[[RIE Etching Recipes|R3]] |
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|{{rl|RIE Etching Recipes|AlGaAs\GaAs Etching (RIE 5)}} |
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|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}} |
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|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R3]] |
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|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|AlGaAs Etch (Unaxis VLR)}} |
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! bgcolor="#d0e7ff" align="center" |AlGaN |
! bgcolor="#d0e7ff" align="center" |AlGaN |
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|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R2]] |
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|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}} |
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|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}} |
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! bgcolor="#d0e7ff" align="center" |CdZnTe |
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|{{rl|RIE Etching Recipes|CdZnTe Etch (RIE 2)}} |
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|[[RIE Etching Recipes|R3]] |
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! bgcolor="#d0e7ff" align="center" |GaAs |
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|{{rl|RIE Etching Recipes|AlGaAs\GaAs Etching (RIE 5)}} |
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|{{rl|ICP Etching Recipes|GaAs-AlGaAs_Etch_.28Panasonic_1.29}} |
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|{{rl|ICP Etching Recipes|GaAs Etch (Panasonic 2)}} |
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|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|GaAs Etch (Unaxis VLR)}} |
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! bgcolor="#d0e7ff" align="center" |GaAs |
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|[[RIE Etching Recipes|R4]] |
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|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}} |
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|[[ICP Etching Recipes#GaAs Etch .28Panasonic 2.29|R3]] |
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|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R2]] |
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! bgcolor="#d0e7ff" align="center" |GaN |
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|{{rl|RIE Etching Recipes|GaN Etching (RIE 5)}} |
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|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}} |
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|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}} |
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|- bgcolor="#eeffff" |
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! bgcolor="#d0e7ff" align="center" |GaN |
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|[[RIE Etching Recipes|R4]] |
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|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}} |
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|R1 |
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|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R3]] |
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|[[ICP Etching Recipes#SiO2 Etching .28Panasonic 2.29|R6]] |
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! bgcolor="#d0e7ff" align="center" |'''Material''' |
! bgcolor="#d0e7ff" align="center" |'''Material''' |
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| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> (MRC)]] |
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]] |
||
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes# |
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]] |
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| bgcolor="#daf1ff" |[[ |
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]] |
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| bgcolor="#daf1ff" |[[ |
| bgcolor="#daf1ff" |[[ICP Etching Recipes#PlasmaTherm.2FSLR Fluorine Etcher|Fluorine ICP <span style="font-size: 88%;">(PlasmaTherm)</span>]] |
||
| bgcolor="#daf1ff" |[[ |
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E646V.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic E626I)</span>]] |
||
| bgcolor="#daf1ff" |[[ |
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E640)</span>]] |
||
| bgcolor="#daf1ff" |[[ |
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]] |
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| bgcolor="#daf1ff" |[[ |
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]] |
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| bgcolor="#daf1ff" |[[ |
| bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]] |
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| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Clean_.28Gasonics_2000.29|Plasma Clean<br>(Gasonics 2000)]] |
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| width="95" bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean (YES EcoClean)]] |
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| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]] |
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]] |
||
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br>(EVG 810)]] |
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br><span style="font-size: 88%;">(EVG 810)</span>]] |
||
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br>(Xetch)]] |
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br><span style="font-size: 88%;">(Xetch)</span>]] |
||
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br>(uETCH)]] |
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br><span style="font-size: 88%;">(uETCH)</span>]] |
||
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br>(Oxford)]] |
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br><span style="font-size: 88%;">(Oxford)</span>]] |
||
|} |
|} |
||
==='''Process Ranking Table'''=== |
|||
Processes in the table above are ranked by their "''Process Maturity Level''" as follows: |
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{| class="wikitable" |
|||
!Process Level |
|||
! colspan="11" |Description of Process Level Ranking |
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|- |
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|A |
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| colspan="11" |Process '''A'''llowed and materials available but never done |
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|- |
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|R1 |
|||
| colspan="11" |Process has been run at least once |
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|- |
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|R2 |
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| colspan="11" |Process has been run and/or procedure is documented or/and data available |
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|- |
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|R3 |
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| colspan="11" |Process has been run, procedure is documented, and data is available |
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|- |
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|R4 |
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| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available |
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|- |
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|R5 |
|||
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available |
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|- |
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|R6 |
|||
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available |
|||
|} |
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[[Category:Processing]] |
[[Category:Processing]] |
Latest revision as of 00:41, 22 October 2024
Process Control Data
See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches
Dry Etching Tools/Materials Table
The Key/Legend for this table's A...R6
values is at the bottom of the page.
Process Ranking Table
Processes in the table above are ranked by their "Process Maturity Level" as follows:
Process Level | Description of Process Level Ranking | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|
A | Process Allowed and materials available but never done | ||||||||||
R1 | Process has been run at least once | ||||||||||
R2 | Process has been run and/or procedure is documented or/and data available | ||||||||||
R3 | Process has been run, procedure is documented, and data is available | ||||||||||
R4 | Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available | ||||||||||
R5 | Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available | ||||||||||
R6 | Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available |