Dry Etching Recipes: Difference between revisions

Latest revision as of 00:41, 22 October 2024

See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches

The Key/Legend for this table's A...R6 values is at the bottom of the page.

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level	Description of Process Level Ranking
A	Process Allowed and materials available but never done
R1	Process has been run at least once
R2	Process has been run and/or procedure is documented or/and data available
R3	Process has been run, procedure is documented, and data is available
R4	Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available
R5	Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available
R6	Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available

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-|[[RIE Etching Recipes|R4]]
+|[[ICP Etching Recipes#DSEIII .28PlasmaTherm.2FDeep Silicon Etcher.29|R6]]
-|[[ICP Etching Recipes#Si Etching .28Fluorine ICP Etcher.29|R5]]
+|[[ICP Etching Recipes#Si Etching .28Fluorine ICP Etcher.29|R6]]
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 |{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}}
 |[[ICP Etching Recipes#GaAs Etch .28Panasonic 2.29|R3]]
-|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R3]]
+|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R2]]
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 |{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}}
 |R1
-|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R2]]
+|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R3]]
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