Plasma Activation (EVG 810): Difference between revisions
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==About== |
==About== |
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This a capacitively coupled Oxygen plasma activation system used exclusively for the surface activation of clean surfaces prior to wafer bonding. This technique allows bonding temperatures to be lowered and is used as a companion tool to the Karl-Suss SB6 wafer bond tool. |
This a capacitively coupled Oxygen plasma activation system used exclusively for the surface activation of clean surfaces prior to wafer bonding. This technique allows bonding temperatures to be lowered and is used as a companion tool to the Karl-Suss SB6 wafer bond tool. |
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'''No etching nor photoresist is allowed in this tool!''' |
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'''It is for "clean" bonding activation only, <u>not</u> plasma etching.''' |
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==Detailed Specifications== |
==Detailed Specifications== |
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Revision as of 16:34, 24 October 2024
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About
This a capacitively coupled Oxygen plasma activation system used exclusively for the surface activation of clean surfaces prior to wafer bonding. This technique allows bonding temperatures to be lowered and is used as a companion tool to the Karl-Suss SB6 wafer bond tool.
No etching nor photoresist is allowed in this tool! It is for "clean" bonding activation only, not plasma etching.
Detailed Specifications
- Gases used: O2 and N2
- Sample size: pieces to 6” wafer
- Recipes characterized for substrate thicknesses between 250um and 750um. Thicknesses outside of this range need to have parameters optimized to minimize reflective power.
Documentation
Recipes
Please see the Oxygen Plasma Recipe page for standard EVG recipes.