MLA Recipes: Difference between revisions
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|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 955 1.8]] |
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|4 krpm/30s |
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|95°C/90” |
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|~1.8 µm |
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|405 |
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|210 |
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| 10 |
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|110°C/90s |
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|AZ300MIF |
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|60s |
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|UCSB design (good for dense lines~1um) |
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|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]] |
|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]] |
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|60s |
|60s |
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|Used MLA design |
|Used MLA design |
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|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]] |
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|3.5 krpm/30s |
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|115°C/2m |
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|~7 µm |
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|405 |
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|440 |
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|5 |
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|50°C/1m, ramp up, 115°C/90s |
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|AZ300MIF |
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|70s |
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|UCSB design 1um pillars/5um trenches] |
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|[[:File:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]] |
|[[:File:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]] |
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Latest revision as of 19:20, 12 November 2024
Maskless Aligner (Heidelberg MLA150)
Photolithography Recipes for the Heidelberg MLA150. Description of litho params- different lasers available, greyscale etc.
Positive Resist (MLA150)
General notes: Hotplates used, filters, laser wavelengths, etc. “Soft Bake” is right after spin, “PEB” is post-exposure bake - right after exposure
| Resist | Spin Cond. | Soft Bake | Thickness | Laser (nm) | Exposure Dose (mJ/cm2) | DeFocus | Post-Exposure Bake | Developer | Developer Time | Comments |
|---|---|---|---|---|---|---|---|---|---|---|
| AZ4110 | 4 krpm/30s | 95°C/60s | ~ 1.1 µm | 405 | 240 | 5 | none | AZ400K:DI 1:4 | 50s | Used MLA design (good for isolated lines 0.8-1um) |
| AZ4330 | 4 krpm/30s | 95°C/60s | ~ 3.3 µm | 405 | 320 | 6 | none | AZ400K:DI 1:4 | 90s | Used MLA design |
| AZ4620 | ||||||||||
| SPR 955 1.8 | 4 krpm/30s | 95°C/90” | ~1.8 µm | 405 | 210 | 10 | 110°C/90s | AZ300MIF | 60s | UCSB design (good for dense lines~1um) |
| SPR 220-3.0 | 2.5 krpm/30s | 115°C/90” | ~ 2.7 µm | 405 | 325 | - 4 | 115°C/90s | AZ300MIF | 60s | Used MLA design |
| SPR 220-7.0 | 3.5 krpm/30s | 115°C/2m | ~7 µm | 405 | 440 | 5 | 50°C/1m, ramp up, 115°C/90s | AZ300MIF | 70s | UCSB design 1um pillars/5um trenches] |
| SPR 955-CM0.9 | 3 krpm/30s | 95°C/90” | ~ 0.9 µm | 405 | 250 | - 7 | 110°C/90s | AZ300MIF | 60s | Used MLA design, [for 5um pillars/1um trench:150/5] |
| THMR-3600HP | 1.5 krpm/45s250 rpm/s | 100°C/60s | 0.430µm | 405 | 180–220 | -4 | 100°C/60s | AZ300MiF | 20s | line/space:
low dose for clear-field, high does for dark-field |
Negative Resist (MLA150)
General notes: Hotplates used, filters, laser wavelengths, etc. “Soft Bake” is right after spin, “PEB” is post-exposure bake - right after exposure. “Flood exposure” is only for AZ5214 for image reversal, after PEB.
| Resist | Spin Cond. | Soft Bake | Thickness | Laser (nm) | Exposure Dose (mJ/cm2) | DeFocus | PEB | Flood | Developer | Developer Time | Comments |
|---|---|---|---|---|---|---|---|---|---|---|---|
| AZ5214 | 6 krpm/30s | 95°C/60s | ~ 1.0 µm | 375 | 35 | - 5 | 110°C/60s | 60" | AZ300MIF | 60s | Used UCSB design. Good for up to ~1.3um open line space. |
| AZnLOF2020 | 4 krpm/30s | 110°C/60s | ~ 2.1µm | 375 | 340 | - 3 | 110°C/60s | none | AZ300MIF | 90s | Used UCSB design. Good for 2um open line space. |
| SU-8 2075 | ~70µm | 375 | Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end. |
Greyscale Lithography (MLA150)
Description...
| Resist | Spin Cond. | Bake | Thickness | Laser | Exposure Dose (mJ/cm2) | Focus Offset | Rehydrate | PEB | Flood | Developer | Developer Time | Comments |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AZ4620 | – krpm/30” | 95°C/60” | 60" | AZ300MIF | 60" |
| ||||||
| SPR 220-7 | –3.5krpm/30” | 105°C/120” Cool 1min | ~7um | 375 | 624mJ to clear large mm area, 520mJ to clear ~5um lines | neg 20 | >1hr | 115C/90s | AZ300MIF | 70s |
|
Rehydration after exposure is necessary, to prevent bubbles at PEB |